UNR31AN00L Allicdata Electronics

UNR31AN00L Discrete Semiconductor Products

Allicdata Part #:

UNR31AN00LTR-ND

Manufacturer Part#:

UNR31AN00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR31AN00L datasheetUNR31AN00L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A UNR31AN00L is a pre-biased, single, bipolar junction transistor (BJT) designed for high-power audio, deflection, switch mode power supply and other power switching applications. It has a voltage rating of 100 V, a current rating of 30 A, an operating frequency range of 30 MHz to 350 MHz, a collector power dissipation of 8 W, an operating temperature range of -55°C to 150°C, and an insulation withstand voltage rating of 500 V. This device is a general purpose power transistor designed to offer high speed switching performance, low input capacitance and good temperature stability.

The working principle of a UNR31AN00L is quite simple. It has two main components - an emitter and a collector - which are separated by a thin insulating layer called the base. When a sufficient current is applied to the base, it causes the electrons to flow from the emitter to the collector and vice versa. This current flow causes a voltage drop across the base and the collector, resulting in a voltage gain. This gain is called the current gain and it is expressed as the ratio between the collector current and the base current.

The UNR31AN00L is primarily used in high-level power applications. For example, it can be used in audio amplifiers and switch mode power supplies (SMPS). It is also used in deflection circuits and as a switch in power supply systems. Due to its high voltage and current ratings, it can efficiently handle high power loads without the need for additional power supplies.

In audio applications, the UNR31AN00L can be used as a current amplifier or driver. When connected to an audio amplifier, the transistor will act as a pre-amplifier, providing amplification of the input signal. The transistor can also be used as an output driver, where it will provide additional voltage to the output signal. This additional voltage can be used to increase the output power of the amplifier.

In switch mode power supplies, the UNR31AN00L can be used as a switch to control the flow of current in the power supply circuit. When the base current is supplied, the transistor will conduct and supply the necessary current for the application. When the current is not needed, the transistor will not conduct and the current will be cut off. This type of switching helps in regulating the output voltage and current of the power supply.

In deflection circuits, the UNR31AN00L is used to control the movement of the electron beam across the display. By controlling the current flow to the transistor, the movement of the electron beam can be accurately controlled, allowing for a better picture quality on the display.

The UNR31AN00L is an excellent choice for any power switching applications. It has a high current rating, a wide operating temperature range, good temperature stability, and low input capacitance. This makes it ideal for any high power application, allowing for higher efficiency and a longer life span of the device.

The specific data is subject to PDF, and the above content is for reference

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