UNR9110J0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9110J0LTR-ND |
Manufacturer Part#: |
UNR9110J0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR9110J0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
3000 +: | $ 0.04881 |
Resistor - Base (R1): | 47 kOhms |
Supplier Device Package: | SSMini3-F1 |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR9110J0L is a single, pre-biased Bipolar junction transistor (BJT). This type of transistor has numerous uses in almost any electronic device since they are capable of amplifying and controlling current flow. As such, they are extremely useful for a wide range of applications, from power supplies to RF communications.
A BJT operates on the principle of a voltage-controlled current sources. This means that when a voltage is placed across the base-collector of the BJT, current flows from the emitter to the collector. This current flow can be adjusted by controlling the voltage at the base-collector.
The UNR9110J0L has an extremely low breakdown voltage of just 0.3V. This means that it can be pre-biased without the need for an external power supply. The low success voltage also makes it an ideal choice for low power systems. This makes the UNR9110J0L an excellent choice for applications where power consumption is a major concern.
Another advantage of the pre-biased feature of the UNR9110J0L is that it eliminates the need for an external shield. This reduces the size and weight of a system, making it ideal for applications where physical space or weight is important.
The UNR9110J0L can be used in many applications. It is well-suited for power converters and inverters, where it can be used to control the current flow for greater efficiency. It can also be used in digital signal processing and communications, where it can help reduce the amount of power needed.
The UNR9110J0L is also well-suited for RF applications. Its low breakdown voltage makes it an ideal choice for RF amplifiers and oscillators. The low voltage also ensures a wider dynamic range, which can help to reduce noise and improve performance.
In addition to its wide range of applications, the UNR9110J0L has many benefits. It is highly reliable, with a low failure rate. It is also resistant to thermal shock and power cycling. This makes it an ideal choice for applications exposed to harsh environmental conditions.
The UNR9110J0L is a versatile, reliable, and power-efficient Bipolar junction transistor. Its low breakdown voltage, pre-biased feature, and ability to reduce power consumption make it an ideal choice for a wide range of applications. Whether it is used for RF communications or power supplies, the UNR9110J0L is an excellent choice for any electronic system that requires low-level amplification and control.
The specific data is subject to PDF, and the above content is for reference
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