UNR9113G0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	47 kOhms
Supplier Device Package:	SSMini3-F3
Package / Case:	SC-89, SOT-490
Mounting Type:	Surface Mount
Power - Max:	125mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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UNR9113G0L is a pre-biased single bipolar junction transistors (BJT). It is designed for providing high reliability and power dissipation levels in active and passive components of electronics systems. This type of device is used for applications such as general-purpose switching, motor control, power switching, and power control.The UNR9113G0L is a pre-biased single BJT. This means that the device has a built-in bias voltage applied from the collector to the base, which is called a “base bias voltage.” When a voltage is applied to the base of the transistor, it allows current to flow from the collector to the emitter, or vice-versa depending on the polarity of the base voltage. This can be used for switching, logic circuits, and power control.The UNR9113G0L is designed to provide a robust power control solution in applications such as motor control, switching, and power control. With its built-in bias voltage, it can handle higher voltage applications while still providing low on-resistance and power switching capability. This makes the UNR9113G0L well-suited for applications that require high power handling capability and power efficiency such as motor control, switching, and power control.The UNR9113G0L is a monolithic integrated circuit (IC) transistor and is comprised of a PN junction. It is made up of three terminals, the base, collector, and emitter. During operation, the collector is connected to the positive voltage supply, while the base and the emitter are connected to the ground, or the negative voltage. The base bias voltage is applied to the base before operation and helps control the amount of current that can flow through the transistor. The higher the base bias voltage, the higher the current passing through the transistor, and vice-versa.The UNR9113G0L has a high peak output current and low on-resistance, which makes it a suitable choice for high current applications such as motor control and power switching. It also has high voltage rating, which makes it a suitable choice for use in high voltage applications such as power distribution and power control.The UNR9113G0L also has a high breakdown voltage, which helps it to withstand the higher voltage applications. It also has a high collector-emitter saturation voltage, which helps reduce the power dissipation of this device. This transistor can handle high power, but it is still sensitive to heat and thermal stress, so it should be operated in a manner that prevents thermal stress.The UNR9113G0L has a wide range of applications in the electronics industry. It can be used for general-purpose switching, motor control, power switching, and power control applications. It is also used for high voltage applications such as power distribution and power control. It is a reliable device that has high peak output current and low on-resistance, making it a suitable choice for applications that require high power handling capability and power efficiency.

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