UNR911LJ0L Discrete Semiconductor Products

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The UNR911LJ0L transistor is a pre-biased single bipolar junction transistor (BJT) designed specifically for low-power applications. It is a silicon transistor and is a PNP type with a built-in base resistor, making it ideal for circuit designers looking for simplicity in design. The transistor is available with a variety of power ratings, ranging from 75mW to 500mW.

The UNR911LJ0L transistor is used for amplifier and switch circuit applications. This transistor works by allowing electrical current to flow between the collector and emitter while the base is subject to a lower voltage than either the collector or emitter. This action can be used to amplify incoming signals or control the power levels in certain circuits. The current gain of the transistor is usually specified as its ‘hFE’ rating and can range from 40 to 250 for this particular device.

A few of the operating specifications of the UNR911LJ0L transistor are as follows. It has a maximum collector current of 1.0A and a maximum collector-emitter voltage of 30V. It can handle a maximum continuous power of 500mW and a junction temperature of +150°C. The transistor

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