UNR9215J0L Allicdata Electronics
Allicdata Part #:

UNR9215J0LTR-ND

Manufacturer Part#:

UNR9215J0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR9215J0L datasheetUNR9215J0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1
Description

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UNR9215J0L is a pre-biased single bipolar junction transistor (BJT) designed for use as amplifier and switch elements in automotive and commercial environments. It is characterized by low power dissipation, high current-gain cutoff frequency, and low-noise operation. The device features an integrated gate-drive circuit for easy system integration and operation. The pre-biased operation of the device allows for a low quiescent current, reducing overall power consumption.

The UNR9215J0L consists of a two-layer NPN transistor structure, with the base region and the collector region connected to two independent bias networks. The base is connected to an emitter resistor, which is used to generate the boose voltage necessary to drive the transistor in the forward-active region. The emitter resistor also provides a solution to improve the stability of the body-bias network, linked with the source voltage.

The UNR9215J0L is a high-performance device that is capable of delivering up to 1A of output current. The device operates in an ohmic region with a low forward voltage drop, making it ideal for use in high-current applications. The low-noise operation of the device makes it suitable for low-noise audio amplifiers and other systems that are sensitive to noise. The high current-gain cutoff frequency of the device also makes it ideal for use in high-frequency switching and signal conditioning applications.

The device also features an integrated gate-drive circuit, which enables simple and smooth operation of the transistor. The gate-drive circuit allows for a more accurate control of the transistor\'s output current, which helps to improve the system\'s overall performance. The gate-drive circuit also eliminates the need for external control circuitry, saving both cost and complexity.

In summary, the UNR9215J0L is a high-performance single bipolar junction transistor, pre-biased for use in automotive and commercial applications. Its low quiescent current and low-noise operation make it ideal for low-noise audio amplifiers and high-frequency switching and signal conditioning applications. Additionally, its integrated gate-drive circuit ensures smooth and accurate operation, eliminating the need for external control circuitry.

The specific data is subject to PDF, and the above content is for reference

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