UNR9118J0L

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	510 Ohms
Resistor - Emitter Base (R2):	5.1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F1

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The UNR9118J0L is a single pre-biased bipolar transistors (BJT) that enables efficient and reliable switching of various electrical loads. It is designed for use in applications from 5V to 16V, and is rated for zero to full-power operations up to 150V.The UNR9118J0L has two key components which make it ideal for a wide range of applications. The first is a high level of integration, meaning the device can be used as a standalone solution and does not require additional components for operation. The second is a pre-biased design, allowing it to operate at turn-on and remain in operation without the need for an additional voltage source.The UNR9118J0L is less susceptible to electrical noise than a standard transistor and provides a high-duty cycle operation, which enables efficient and reliable switching of an electrical load. It is designed to operate with a low threshold voltage, which enables the UNR9118J0L to be used in low-voltage applications such as LED lighting systems.The UNR9118J0L is a single pre-biased bipollor transistor (BJT) with a unique topology that enables efficient, reliable, and low-voltage operation. The device uses an active-low gain cell and a pre-biased power cell, which eliminates the need for additional components.The gain cell is an active-low, self-biased device that uses an internal pull-up resistor to achieve base current and enable a reduced quiescent current drain under any operating condition. When the base current is low, the gain cell operates at low threshold voltage to minimize transistor saturation voltage.The pre-biased power cell contains primary and secondary emitters, which enable an optimized static current flow between the emitter and the base. This allows for accurate current regulation under varying loading conditions and reduces switching and thermal losses. The pre-biased power cell also contains a built-in control transistor, which allows for pulse modulation across the collector-to-emitter junction and enables a wide range of device operation.The UNR9118J0L is a robust device for applications with high switching rates and large signal transitions. It features reduced power consumption, low power dissipation, and a very low on-resistance—all of which make it ideal for switching low-voltage applications. It is also designed to allow for easy thermal management and decrease the risk of failure due to overload or overvoltage. Overall, the UNR9118J0L is a highly reliable and efficient transistor that provides a high-density solution for switching low-voltage applications. Its integration and pre-biased design provide low power consumption and a high-duty cycle operation, making it an ideal choice for many different types of applications.

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