UNR9214J0L Allicdata Electronics

UNR9214J0L Discrete Semiconductor Products

Allicdata Part #:

UNR9214J0LTR-ND

Manufacturer Part#:

UNR9214J0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR9214J0L datasheetUNR9214J0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1
Description

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The UC0814JOL is a pre-biased, single-transistor bipolar junction transistor (BJT). It has a base region beneath which is an emitter, and the collector is positioned above the emitter. The transistor is formed of two semiconductor layers: n-type and p-type semiconductors, which are represented as N and P. Electrons located in the N layer are attracted to the positively charged P layer, forming the base region.

In a BJT there are two major pathways of conduction. The first is by forward current, which is done by creating a voltage between the base and the collector. When this voltage is greater than the threshold voltage, a forward current is enabled. The second is done by reverse current, which is enabled when a current is applied to the base region. By controlling the base-collector voltage and the external current applied to the base region, the flow of current between the collector and emitter can be increased or decreased, depending on the situation.

The UNR9214JOL is a pre-biased transistor, meaning that it has a certain amount of bias voltage already present. This bias voltage is designed to reduce the amount of time it takes to start up the device and to increase the performance of the transistor. The bias voltage also helps to ensure the transistor is working correctly, especially if used in high power applications.

The UNR9214JOL is designed to be used in a wide range of applications, including high speed data converters, low voltage sensing and logic switches. Its pre-biased structure makes it an ideal choice for applications that require fast switching between two separate electrical states. It can be used for many different types of load including RF, gate and serial interfaces. Its low voltage feature also allows for reliable operation in a wide range of temperatures and voltages.

The UNR9214JOL is a versatile device with a wide range of applications. Its pre-biased technology allows for a fast and reliable transition from one state to another, making it a great choice for many types of logic architectures and embedded systems. Its low voltage operation enhances its efficiency, making it suitable for a variety of power circuits.

Overall, the UNR9214JOL is a versatile device that is suitable for a wide range of applications. Its pre-biased technology allows for a fast and reliable transition, while its low voltage operation means that it can be used for a variety of power circuits. Its versatility makes it an ideal choice for a wide range of applications, from high speed data converters to low voltage sensing and logic switching.

The specific data is subject to PDF, and the above content is for reference

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