UNR921AJ0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	100 kOhms
Supplier Device Package:	SSMini3-F1
Package / Case:	SC-89, SOT-490
Mounting Type:	Surface Mount
Power - Max:	125mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	100 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The UNR921AJ0L is a single BJT (bipolar junction transistor) pre-biased from the UCB BT3000A series. This series of BJT transistors are designed to provide low-power, yet highly efficient solutions for applications. The UNR921AJ0L is suitable for use in low voltage, high current and low power circuits. The UNR921AJ0L has a wide range of uses and applications in various electronic devices.

Characteristics

The UNR921AJ0L is a single BJT transistor that has an N-channel structure. This type of transistor is designed to provide power efficiency and has a lower voltage drop compared to other types of transistors. It has a voltage rating of 30V, current rating of 0.2A, power rating of 0.6W and a collector-emitter saturation voltage of 0.3V. The UNR921AJ0L also has a high frequency capability to support higher switching frequencies of up to 300MHz.

Features and Working Principle

The UNR921AJ0L has a range of features that make it suitable for many applications. The device has a fast switching speed, low voltage drop and low power dissipation. It also has an internal dielectric temperature sensor, which provides additional protection against overheating. This reduces the risk of circuit failure due to thermal stress in high temperature applications. Additionally, the UNR921AJ0L features a pre-set resistor, which provides optimum circuit protection and longer life.The working principle of the UNR921AJ0L is based on two types of transistors: the PNP and NPN transistors. The NPN transistor has an emitter and a collector, with the collector connected to the base. When the base receives a signal current, it switches the transistor into the active region and turns on the NPN transistor. This causes current to flow from the emitter to the collector and back again, effectively switching the power MOSFET.

Applications and Benefits

The UNR921AJ0L is suitable for a wide range of applications, including power supplies, circuits with low voltage, automotive electronics and computer peripherals. The device is also suitable for use in power management systems, lighting systems, communication systems, and other consumer and industrial electronics applications.The UNR921AJ0L’s features enable it to deliver a high level of efficiency, fast switching speed and low voltage drop. This can result in significant savings in power consumption and component costs. The device also reduces the risk of failure due to thermal stress, as it is protected by an internal temperature sensor.

Conclusion

The UNR921AJ0L is a single pre-biased BJT transistor from the UCB BT3000A series. It is suitable for a wide range of applications, including power supplies, automotive electronics and computer peripherals. The device can deliver a high level of efficiency, fast switching speed and low voltage drop, reducing component costs and power consumption. Additionally, the circuit is protected by an internal temperature sensor, reducing the risk of circuit failure due to thermal stress in high temperature applications.

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