UNR9116J0L Allicdata Electronics

UNR9116J0L Discrete Semiconductor Products

Allicdata Part #:

UNR9116J0LTR-ND

Manufacturer Part#:

UNR9116J0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR9116J0L datasheetUNR9116J0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1
Description

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Unr9116j0l products, which are classed as single, pre-biased bipolar transistors (BJT), are used in a variety of applications and come with a variety of features.

Description

The Unr9116j0l is composed of a single transistor in which the emitter, base and collector are interconnected. This transistor has a single gate terminal which is used to modulate the current flowing through the device. The Unr9116j0l utilizes up to 1.2V which is sufficient to provide a base, emitter, and collector current. The device can be operated at temperatures ranging from -25C to + 125C and is available in various configurations.

Application Field

The Unr9116j0l is designed for use in applications such as motor control, automotive, industrial, and medical devices, due to its fast switching speeds, wide temperature range, and excellent protection against EMI/RFI. The device can be used in low-power amplifiers, LED drivers, LED displays, and audio amplifier stages. It is also suitable for applications such as camera flash modules, remote control units, LCD backlights, and mobile devices, where fast switching speeds and energy savings are required.

Working Principle

When a voltage is applied to the emitter-base circuit of the Unr9116j0l, the base-emitter junction turns on and allows current to flow from the emitter to the base. This current forms the base current of the transistor, which in turn forms the collector current. The collector current is then amplified and controlled by the input voltage. The Unr9116j0l is suitable for operation in both depletion and enhancement mode, making it an ideal choice for applications requiring both operation modes.

The Unr9116j0l is also equipped with an enhanced protection circuit, which prevents damage due to reverse bias or excessive input drive currents. This protection circuit greatly improves the reliability of the device, and makes it suitable for high-power, noise sensitive, and industrial applications.

Conclusion

The Unr9116j0l is a pre-biased, single transistor bipolar junction device designed for use in a variety of different application fields. The device is suitably used in low-power amplifiers, LED drivers, LED displays, and audio amplifier stages, and is also suitable for camera flash modules, remote control units, LCD backlights, and mobile devices. The Unr9116j0l is equipped with an enhanced protection circuit, which greatly improves its reliability and makes it suitable for high-power, noise sensitive, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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