UNR9212G0L Discrete Semiconductor Products

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The UNR9212G0L is a single, prebiased, bipolar junction transistor (BJT) designed for use in high-speed switching and amplifying applications. The device has an optimized geometry for maximum output power, with a maximum collector current of 100mA.

The UNR9212G0L is a NPN type transistor, meaning that the two internal electrodes are in an alternating configuration. The two internal electrodes are the base and the collector. The device is made of two separate layers of semiconductor material - P-type and N-type layers. An electrical current flow between the two layers creates a voltage drop, which is then amplified.

The UNR9212G0L is designed to deliver fast switching speeds with low power dissipation in switching and amplifying applications. Its prebiased design helps minimize switching time and minimize power consumption. The device also features an integral temperature sensing diode to protect against thermal overloads.

The UNR9212G0L can be used in a wide range of applications, including audio and power circuit design, switch-mode power supplies, signal processing circuits, and robotics. It can also be used for high-speed signal amplification and signal switching applications.

The UNR9212G0L is constructed using high-quality fabrication processes, ensuring that it can operate reliably in hostile environments. It is designed to withstand extremely high temperatures, with a working temperature range of -50°C up to +150°C. It also features a low-noise operation, with a noise figure of just 2.5dB.

The UNR9212G0L also features an integral current-limiting feature that helps limit total device power dissipation. This is an important feature when dealing with power-sensitive applications. The device also has a low saturation voltage, meaning that it can easily tolerate large voltage swings without causing damage to the circuit components.

The UNR9212G0L is designed for maximum performance, with an output power of 65 watts and a power gain of 35 dB. Its high power output, low distortion, and low noise make it suitable for use in applications that require high-power amplifiers, such as car navigation systems and audio systems.

In summary, the UNR9212G0L is a single, prebiased, bipolar junction transistor (BJT) which is designed for high-performance applications requiring fast switching speeds with low power dissipation. Its prebiased design helps minimize switching time and minimize power consumption and it features an integral temperature sensing diode to protect against thermal overloads. Its high power output, low distortion, and low noise make it ideal for use in a wide range of amplifying applications.

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