UNR9117J0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9117J0LTR-ND |
Manufacturer Part#: |
UNR9117J0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR9117J0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR9117J0L is a single, pre-biased bipolar junction transistor (BJT) that is used in a variety of electronic applications. It is a NPN type BJT, which means it has two p-type terminals – the emitter and the collector – and one n-type terminal – the base. The UNR9117J0L is pre-biased, meaning that its three terminals are connected together in a particular manner in order to produce a predetermined bias voltage across the emitter-base junction. The UNR9117J0L is particularly useful in applications where a low on-state voltage drop is desired, such as RF amplifiers, switching regulators, low noise amplifiers, and other power management circuits.
The UNR9117J0L operates by allowing current to flow from its emitter to its collector when its base is given a small minimum “forward” bias. This minimum forward bias is created by a voltage applied to the base, which increases the impurity concentration of the base, allowing current to flow more easily from the emitter to the collector. The amount of current from the collector to the emitter depends directly on the forward bias voltage applied to the base terminal. The voltage is held at a constant value, so that the collector current is not affected by changes in supply voltage.
The UNR9117J0L has a high collector-emitter voltage rating of 350 volts, and can withstand current levels up to 15 amps. Additionally, the junction temperature of the transistor is rated up to 175 degrees Celsius. Due to its high temperature and voltage ratings, it\'s suitable for applications that require high levels of power. Additionally, the UNR9117J0L has a very low total power dissipation rating of only 12 W, which makes it ideal for applications that require a low on-state voltage drop.
The UNR9117J0L is also relatively low cost and is readily available in many parts distributors, making it an ideal choice for many applications. It\'s commonly used in RF amplifiers, switching regulators, low-noise amplifiers, and power management circuits. Additionally, it\'s well suited for use as a switch or amplifier in automotive applications.
The UNR9117J0L is a reliable, low-cost, pre-biased transistor that is suitable for a variety of electronic applications. It’s easy to use, has a high collector-emitter rating, and is readily available. Additionally, its low total power dissipation rating makes it well suited for applications that require a low voltage drop. It’s suitable for use in RF amplifiers, switching regulators, low-noise amplifiers, power management circuits, and as a switch or amplifier in automotive applications.
The specific data is subject to PDF, and the above content is for reference
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