UNR9114J0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9114J0LTR-ND |
Manufacturer Part#: |
UNR9114J0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR9114J0L Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04881 |
6000 +: | $ 0.04392 |
Resistor - Emitter Base (R2): | 47 kOhms |
Supplier Device Package: | SSMini3-F1 |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The UNR9114J0L is a single, pre-biased bipolar (BJT) transistor designed for various applications. The device has a collector-emitter voltage (Vce) of 150V, a collector current (Ic) of 3.5A and a maximum power dissipation (Pd) of 20W.The UNR9114J0L is designed for use in automotive and light industrial applications such as DC-DC converters, motor control, and audio amplification. The device has a low collector-emitter leakage current (IBCE) which helps extend battery life in automotive and portable electronic applications.The UNR9114J0L features a common emitter configuration which makes it ideal for use in circuits using positive and negative voltages. Common emitter configuration is beneficial because it allows the use of integrated switching circuitry which helps reduce power losses, costs, and design complexity.The UNR9114J0L also features a unique pre-biased design which simplifies the power supply design in applications which require two power supplies. By pre-biasing the transistor, current flow is guaranteed without the need for additional biasing or power supply circuits.The UNR9114J0L uses a bipolar (BJT) technology which allows for low power dissipation and low on-resistance. This allows for low heat generation, increased efficiency, and faster switching speeds. Additionally, the UNR9114J0L has a high maximum power rating of 20W which makes it suitable for use in high-power applications.The UNR9114J0L uses a collector-emitter saturation voltage (VCE(sat)) of 0.5V. Low saturation voltages are beneficial because they allow for more efficient usage of power supplies and reduce heat dissipation.The UNR9114J0L also features an operating frequency range of 10kHz to 200MHz. This wide frequency range allows for use in various applications, such as audio amplification, motor control, and switching power supplies.Overall, the UNR9114J0L is an ideal transistor for use in automotive and industrial applications. Its pre-biased design simplifies power supply design and its operating frequency range makes it suitable for use in audio amplification, motor control, and switching power supplies. Its low collector-emitter saturation voltage helps maximize efficiency and its high power rating makes it suitable for use in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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