UNR921DJ0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	10 kOhms
Supplier Device Package:	SSMini3-F1
Package / Case:	SC-89, SOT-490
Mounting Type:	Surface Mount
Power - Max:	125mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The UNR921DJ0L is a single, pre-biased transistor from the family of Bipolar Junction Transistors (BJT). This specific type of transistor is widely used in many electronics applications, from communication and medical circuit applications to computers, gaming systems, and more. Its robust construction and low voltage requirements make it ideal for a wide range of applications.

Features

The UNR921DJ0L is a pre-biased, single NPN transistor. It is designed to provide high-speed switching and low-power-consuming operation with good current gain, which makes it ideal for many low power and high speed applications. It has a relatively low voltage requirement of ±2.2V-5V and an operating temperature range of -40 to +85°C. It features a collector-emitter voltage of 40V, making it suitable for use in a variety of circuit designs. The device is also UL listed and RoHS compliant.

Applications

Due to its robust construction and low voltage requirements, the UNR921DJ0L is suitable for a wide variety of applications. Common applications include transistor logic circuits, processor circuits and line drivers, optoisolators, motor control devices, and automotive electronics. This device can also be used for heating applications, such as automatic thermostats. Furthermore, due to its high current gain and low voltage, it can be used as a power amplifier.

Working Principle

The UNR921DJ0L is a single NPN transistor, which operates according to the principles of a Bipolar Junction Transistor (BJT). In a BJT, electrons migrate between two semiconductor layers, the base and the emitter. The base layer is the most important layer in this structure, as it controls the flow of electrons between the emitter and the collector. The emitter and the collector layers act as reservoirs for electrons, and the current flow is regulated by the base layer. When a small current is applied to the base layer, a current amplification occurs and the current between the emitter and the collector increases proportionally. This current amplification is referred to as “current gain”. The current gain of the UNR921DJ0L is in the range of 70-120, depending on temperature and other operating conditions.

Conclusion

The UNR921DJ0L is a single, pre-biased transistor from the family of Bipolar Junction Transistors (BJT). It is suitable for a wide range of applications, from motor control devices, transistor logic circuits and processor circuits to manufacturing control systems and heating applications. Additionally, the UNR921DJ0L is designed to provide low-power operation, high-speed switching and good current gain. It operates according to the principles of a Bipolar Junction Transistor (BJT), where a base layer regulates the flow of electrons between the emitter and the collector.

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