UNR921MG0L Discrete Semiconductor Products

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UNR921MG0L is a single, pre-biased, bipolar junction transistor (BJT). It is a three-terminal device with a base terminal, collector terminal, and emitter terminal. The base is used to control the current flow between the collector and emitter terminals. It works on the principle of minority carrier injection.

UNR921MG0L can be used for various electronic applications, including switching, amplification and oscillator circuits. It is used in switching applications because of its availability in different packages, and its ability to handle large current and voltage. In amplification applications, it is used as a voltage or current amplifier, or as an impedance matching device. It is also used in oscillator circuits for generating audio frequencies, or for mixing two or more frequencies.

UNR921MG0L has a pre-biased configuration, which means that the base-emitter junction is pre-biased to causes current to flow through the device. This makes it more efficient in some applications, as it eliminates the need for external components to bias the transistor. It also has high frequency response, which is useful in some switching applications where the switching frequency needs to be high. Additionally, the UNR921MG0L has a hFE of 170 at 0.8V Collector to Emitter, 150 at 3.2V Collector to Emitter, and 100 at 4.0V Collector to Emitter. This high hFE when combined with good VBE, makes this transistor suitable for low β reduction applications.

UNR921MG0L can also be used in linear applications such as a current amplifier. It is suitable for amplification of low-level signals (e.g. 0.01V) with a good signal-to-noise ratio. Additionally, its low input capacitance makes it come in handy in high-frequency applications, such as radio receivers. It also excels when it comes to high temperature operation, with a maximum range up to 175ºC.

In summary, UNR921MG0L is a single, pre-biased, bipolar junction transistor that is used for various electronic applications. It has a pre-biased configuration, which makes it more efficient than some other transistors. Its high frequency response and high hFE makes it suitable for low β reduction applications. Additionally, it is useful in linear applications and high-temperature operations as well.

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