UNR9110G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9110G0LTR-ND |
Manufacturer Part#: |
UNR9110G0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR9110G0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04881 |
Resistor - Base (R1): | 47 kOhms |
Supplier Device Package: | SSMini3-F3 |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The UNR9110G0L is a pre-biased single bipolar transistor designed for low-noise, high-speed performance in low voltage bias applications. It combines a common emitter output and a common collector input, providing excellent dynamic performance. The UNR9110G0L has a base current (IB) of 4.5mA, and a collector current (IC) of 10mA, with a guaranteed minimum on-state dynamic current gain (hFE) of 15. The maximum operating voltage is 30V, and the minimum junction operating temperature is -65°C.
The UNR9110G0L is a single bipolar transistor that utilizes PN junction technology. It has a common emitter output and a common collector input, and can be used in both analog and digital circuits. In the common emitter configuration, the collector current is controlled by the base current (IB), and the base voltage (VB). The output is taken from the collector, and the input is taken from the emitter.
The UNR9110G0L is typically used in applications that require low-noise, high-speed operation, as well as low voltage bias, such as audio amplifiers, audio oscillators, and DC-DC converters, among many others. It is also used in pulse width modulation (PWM) applications due to its low drift over temperature.
The UNR9110G0L is ideal for use in low voltage, low power applications due to its low voltage drop, high collector current gain (hFE), and low current leakage. It is also capable of moderately high-frequency operation, up to 150MHz for small signal applications and 50MHz for power applications.
The working principle of the UNR9110G0L is simple. It is a pre-biased single bipolar transistor, meaning that the base-emitter junction is already biased with current. This means that when the base voltage (VB) is increased, the collector current (IC) is increased as well. This allows the transistor to be used as an amplifier or as a switch, depending on the application.
The UNR9110G0L is a highly versatile device and can be used in a variety of applications. Its low noise performance and high speed operation make it ideal for applications such as audio amplifiers, audio oscillators, and DC-DC converters. It is also a good choice for pulse width modulation (PWM) and other low-voltage, low-power applications.
The specific data is subject to PDF, and the above content is for reference
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