UNR9112J0L Allicdata Electronics

UNR9112J0L Discrete Semiconductor Products

Allicdata Part #:

UNR9112J0LTR-ND

Manufacturer Part#:

UNR9112J0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR9112J0L datasheetUNR9112J0L Datasheet/PDF
Quantity: 6000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
3000 +: $ 0.04881
6000 +: $ 0.04392
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Supplier Device Package: SSMini3-F1
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Power - Max: 125mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Series: --
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors are used in many applications in electronics. They can be used to switch a circuit ON or OFF, amplify a signal, regulate power or a current, or serve as an earpiece. Among these transistors, the UNR9112J0L is a single, pre-biased bipolar junction transistor (BJT) designed for use in high-speed switching operations.

The UNR9112J0L is composed of two main components: a base and an emitter. The base of the transistor is used for switching on and off the flow of current through the transistor. The emitter is the primary electrical connection between the base and the collector. This is where the current passes through when the transistor is switched on.

The UNR9112J0L can switch high voltages and large currents. This makes it suitable for industrial applications, where high-powered electronic components are used. The UNR9112J0L is also capable of handling high-frequency signals, making it a great choice for high-speed switching operations. The UNR9112J0L is a “pre-biased” transistor, which means it can be used without additional must be applied to achieve a certain current flow.

The UNR9112J0L transistor works according to the principle of negative resistance. When a negative voltage is applied to the base of the transistor, the current flowing through the transistor increases and the voltage drops. On the other hand, when a positive voltage is applied, the current flowing through the transistor decreases and the voltage rises. Thus, the base and emitter are pre-biased so that the current through the transistor can be varied by varying the voltage applied to the base.

The UNR9112J0L also features a high current gain, which is a measure of how efficiently it can amplify a signal. This makes the transistor ideal for applications where high-powered electronic devices, such as amplifiers and receivers, are used.

The UNR9112J0L has many applications in the industrial sector. It can be used in data acquisition systems, actuators, motor-drive systems, and numerous other applications. This transistor is also used in the manufacturing of membrane switches, switches with electronic components like transistors, integrated circuits, thyristor chips, and other electronic components.

In conclusion, the UNR9112J0L is a single, pre-biased bipolar junction transistor designed for high-speed switching operations. The UNR9112J0L is composed of a base and an emitter, and it works according to the principle of negative resistance. It can switch high voltages and large currents and has a high current gain. Furthermore, the UNR9112J0L is used in many industrial applications, such as data acquisition systems, actuators, and motor-drive systems.

The specific data is subject to PDF, and the above content is for reference

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