UNR911AG0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100 kOhms
Resistor - Emitter Base (R2):	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

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The UNR911AG0L is a type of transistor that is classified as a single, pre-biased, bipolar junction transistor (BJT). It is a highly efficient device that is widely used in a variety of applications. The transistor is designed to be pre-biased and it has a low gate capacitance which provides the device with a high switching speed.The UNR911AG0L is a direct-coupled and single-stage transistor designed for low power, high speed switching applications. The device is designed using a semiconductor p–n junction in which electrons and holes are separated by a built-in potential barrier. The transistor is pre-biased so that no external biasing is required.The device features a low gate capacitance which allows it to switch quickly and efficiently. This makes it ideal for mobile applications such as mobile phones, PDAs and tablets. It also offers excellent dynamic range and low noise performance. The device is also suitable for use in high frequency radio-frequency (RF) applications.The device operates in a “normally open” or “normally closed” state depending upon the direction of the bias voltage. In a normally open state the junction between the emitter and collector will be forward biased, allowing current to flow from the collector to the emitter. A reverse bias voltage applied to the base will cause the junction to become reverse biased and current will be blocked from flowing.The UNR911AG0L works by controlling the current flow from the collector to the emitter. It ensures that the desired current is achieved by controlling the voltage applied to the base. A voltage applied to the base will cause the current from the collector to the emitter to increase whereas a negative voltage applied to the base will cause the current to decrease. This is the basis for the device’s operation.The transistor also offers a wide range of features such as a wide operating temperature range, high gain, low noise and good linearity. In addition, the device is easy to use and requires very low power to operate. This makes it ideal for use in portable devices such as mobile phones.The UNR911AG0L is a highly efficient and versatile transistor that is capable of operating in a wide range of applications. It is an excellent choice for high speed switching and is capable of providing excellent dynamic range and low noise performance. The device is also easy to use and requires very little power to operate. It is an excellent choice for use in mobile phones, PDAs, tablets and other portable devices.

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