UNR9113J0L Discrete Semiconductor Products

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UNR9113J0L belongs to transistors - bipolar (BJT) - single, pre-biased category. In this material, we will discuss about its application field and working principle.

UNR9113J0L is an enhancement mode P-Channel MOSFET transistor. It is built using an advanced P-Channel MOSFET Silicon process making it suitable to be used for various applications like motor control, load switching and signal switching. The current rating of the UNR9113J0L is 800mA. It is available in a TO-220AB package and has a breakdown voltage of 20V and a on-resistance (RDS) ormax of 0.070 Ohm.

The UNR9113J0L can be used to switch and control a wide range of electrical components. For example, it can be used to control motors, increase the speed of motors, and reduce power consumption. It can also be used to regulate the voltage and current of an electronic device. Furthermore, it can be used to reduce the amount of noise and interference generated by electronic devices.

The working principle of UNR9113J0L is based on P-channel MOSFETs. It is a three terminal, enhancement mode field effect transistor. This means that the switching action of the device is controlled by the gate voltage, which is applied to the input or gate terminal of the device. When the gate voltage is applied to the input terminal, it will cause the channel located between the source and the drain terminals to be forward biased and conduct the current.

The equivalent circuit model of the UNR9113J0L consists of an NMOS transistor and an NPN bipolar transistor. An important aspect of this device is that the gate voltage is always lower than the source voltage. Therefore, when the gate voltage is increased, the channel is forward biased and conducts current. This process is known as enhancement mode and enables the device to switch rapidly.

The UNR9113J0L is also designed for pre-bias applications, which means that it is capable of being used in circuits without any external components. This makes the device easy to use, as it does not require complex circuitry for its operation. Furthermore, the device is designed with a temperature compensation feature, which allows it to operate in a wide range of temperatures without influencing any of the parameters.

In summary, UNR9113J0L belongs to transistors - bipolar (BJT) - single, pre-biased category. It is an enhancement mode P-Channel MOSFET transistor which has an 800mA current rating in a TO-220AB package. Its applications range from motor control, load switching and signal switching to regulating the voltage and current of an electronic device. Its working principle is based on P-Channel MOSFETs, and the equivalent circuit model consists of an NMOS transistor and an NPN bipolar transistor. Additionally, its pre-bias application feature and temperature compensation feature adds to its versatility.

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