UNR911BJ0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911BJ0LTR-ND |
Manufacturer Part#: |
UNR911BJ0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911BJ0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR911BJ0L is one of the main types of transistors in the bipolar (BJT) single, pre-biased category. This type of device is widely-used across a variety of applications in the electronics industry.
The UNR911BJ0L is a low voltage transistor capable of handling a breakdown voltage of 4.6V. It has a maximum current gain of 2000 and a leakage current of 1µA. It is commonly used when high breakdown voltage and very low leakage is required. It has been specifically designed to be used in mobile Base Transceiver Stations (BTSs).
In terms of its application field, the UNR911BJ0L is most commonly used for high voltage, low current applications. It is ideal for applications in the telecoms industry, consumer electronics, automotive, lighting, and other low-voltage applications. It is also suitable for use in multiplexers, SWITCH relays, and current mirrors.
When it comes to working principle, the UNR911BJ0L is a bipolar junction transistor (BJT). It consists of three terminals, the base, the collector, and the emitter. In this type of device, electrical charge carriers (called minority) carrier flow from one terminal to the other. The current gain is determined by the ratio of collector current to base current. In order for the device to be optimized, the collector current must be greater than the base current.
The UNR911BJ0L is a pre-biased device, which means it is already biased ready to use. This is done so that the user does not need to bias it manually, saving time and effort. When designing this type of device, the manufacturer is responsible for biasing the device properly. This allows the device to be used as soon as it is plugged in.
In conclusion, the UNR911BJ0L is a bipolar (BJT) single, pre-biased device that is designed for use in applications that require high breakdown voltage and very low leakage current. It is most commonly used for high voltage, low current applications in the telecoms industry, consumer electronics, automotive, lighting, and other low-voltage applications. Its working principle is based on the flow of charge carriers from one terminal to the other in order to gain an optimum current gain ratio.
The specific data is subject to PDF, and the above content is for reference
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UNR9213J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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UNR9218J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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