UNR911FG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911FG0LTR-ND |
Manufacturer Part#: |
UNR911FG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911FG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR911FG0L is a single, pre-biased bipolar junction transistor (BJT). It is a type of semiconductor device that utilizes the fact that electric current can be amplified between two junctions. The device is designed with a high-speed, low-noise, self-biasing circuit, making it ideal for use in many different applications requiring both ultra-low noise and high-speed operation.
The UNR911FG0L is typically used in low-frequency circuit designs, such as those with five-watt transistor elements. It is particularly suited for audio applications because of its low-noise design. This device is also a great choice for high-frequency switching operations that require smooth characteristics.
The working principle of the UNR911FG0L is based on the concept of polarization, also known as "bias". This is a process by which the transistor is electrically charged, allowing it to conduct current through the depletion layer. Bias is typically achieved by applying a voltage to the transistor\'s base terminal, or the collector terminal.
When the bias voltage is applied, electrons move from the collector terminal to the base. This pushes the electrons into the base and the avalanche effect is then triggered. This allows current to flow through the collector-base junction and into the transistor. The current gain of the device is determined by the size of the capacitor and the voltage applied to the base terminal.
In addition to their use in low-noise circuit designs, the UNR911FG0L can also be used in digital circuits. This is because of their fast response time and low-noise characteristics. Digital circuits are usually much faster than their analog counterparts, and the UNR911FG0L provides the same amount of speed by amplifying the current flow.
The UNR911FG0L is also used in electronic circuits for stabilizing the current in power supplies. This is especially useful in applications that require a highly efficient and reliable power supply. The transistor is also used in power amplifiers and RF amplifiers, which require high electrical power to function.
All in all, the UNR911FG0L is an incredibly versatile device that is ideal for use in many different applications. Its low noise, high speed, and self-biasing characteristics make it a great choice for many different types of circuits. Whether it is used in low-frequency audio applications, digital circuits, or power amplification, the UNR911FG0L can be counted on to deliver high-quality performance time and time again.
The specific data is subject to PDF, and the above content is for reference
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