UNR911NG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911NG0LTR-ND |
Manufacturer Part#: |
UNR911NG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911NG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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The UNR911NG0L is a single, pre-biased, bipolar junction transistor (BJT) and is widely used in a range of applications. This device has been designed to provide relatively high gain, low noise, and good thermal stability while allowing for easy DC biasing. It is therefore an ideal choice for applications where these characteristics are important.
At the heart of the device is the BJT which consists of two P-N junctions placed in series. One junction is known as the emitter while the other is known as the collector. These two junctions are connected by a third, intermediate region known as the base. A special doping process applied at the manufacturing stage creates a diode-like structure that acts as the base-emitter junction. This diode helps to pre-bias the device and thus offers a wide range of possibilities for low-voltage applications.
The UNR911NG0L also provides a current gain, or beta, of up to 200. This ensures that a small current applied to the base can produce a relatively large current flowing from the collector to the emitter. This current gain is the main factor in determining the device’s overall performance. The device also has a high reverse breakdown voltage of up to 9V, allowing for a greater range of applications. In addition, this device has an extremely low noise figure of just 0.2nV/Tesla, ensuring good performance in low-noise applications.
The UNR911NG0L can be used in a wide range of applications including audio amplifiers, RF transceivers, switching regulators, and analog circuits. Due to its low noise and high current gain, the device is ideal for high-fidelity audio applications where low distortion and high dynamic range are key considerations. Additionally, its pre-biased nature makes it an ideal choice for low-voltage analog applications such as optoelectronic sensors and relays.
In summary, the UNR911NG0L is a single, pre-biased, bipolar junction transistor that has been designed to provide relatively high gain, low noise, and good thermal stability while allowing for easy DC biasing. It is therefore a great choice for applications where these characteristics are important, and can be used in a range of audio amplifiers, RF transceivers, switching regulators, optoelectronic sensors, and analog circuits.
The specific data is subject to PDF, and the above content is for reference
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UNR921DJ0L | Panasonic El... | 0.06 $ | 3000 | TRANS PREBIAS NPN 125MW S... |
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UNR9211J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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UNR9113J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
UNR9213J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
UNR9111J0L | Panasonic El... | -- | 1000 | TRANS PREBIAS PNP 125MW S... |
UNR9218J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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UNR911EJ0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
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