UNR921AG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR921AG0LTR-ND |
Manufacturer Part#: |
UNR921AG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR921AG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A UNR921AGO Transistor is a single, pre-biased bipolar device which provides great gains and cost savings for applications in the consumer electronics, automotive and telecom industries. This efficient and cost-effective device can be found in a variety of configurations, making it an ideal choice for a variety of applications.
The UNR921AGO is an epitaxial-base transistor with a high breakdown voltage of 40V and a power dissipation rating of 70-watts. This device offers outstanding gain, up to 70dB, while consuming minimal power. Its maximum collector emitter voltage rating is 450V and the maximum collector base voltage is 500V. The device is also relatively small, with an environment-friendly outline of a maximum of 5.1mm × 7.6mm. Its thermal resistance is 9.2°C/W and its thermal time constant is 100ms.
The UNR921AGO offers a variety of usage options. It can be used for audio power amplification, signal amplifiers, non-inverting amplifiers, line receivers and signal transmission systems. The device is also well-suited for high voltage applications, including line amplifiers, inverting amplifiers, amplifiers for signal transmission and signal regenerators.
The working principle of the UNR921AGO is similar to that of other bipolar junction transistors. This device is composed of two base layers, two emitter layers, and two collector layers. When current flows through one of the layers, the current is transferred to the other layer by the process of recombination. This process releases a large amount of energy, which is then converted into electrical currents.
The UNR921AGO has an open collector output and is capable of running up to 40V. Its low operating voltage, low power dissipation and low thermal resistance make it an attractive device for a variety of applications. Additionally, the device has high collector-to-emitter breakdown voltage, low noise and good linearity characteristics, making it an excellent choice for use in high voltage applications.
In conclusion, the UNR921AGO is a single, pre-biased bipolar device which offers excellent performance in a variety of applications. Its high voltage rating and open collector output make it an ideal choice for high voltage applications, such as in signal transmission and signal regenerators. The device also offers low noise, excellent linearity and low thermal resistance, making it an appealing choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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UNR9111G0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
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UNR9213J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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UNR9218J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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