UNR921CG0L Allicdata Electronics

UNR921CG0L Discrete Semiconductor Products

Allicdata Part #:

UNR921CG0LTR-ND

Manufacturer Part#:

UNR921CG0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR921CG0L datasheetUNR921CG0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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When looking at a variety of transistors, the UNR921CG0L is among the most popular and widely used. This transistor is a single, pre-biased bipolar junction transistor (BJT) with features which make it ideal for a range of applications. This article examines the UNR921CG0L application field and working principle in detail.

UNR921CG0L Application field

The UNR921CG0L transistor is a useful choice for audio, video and communication applications. This pre-biased transistors has an optimum power rating of 250mA for continuous operation and offers high-speed switching. Due to these characteristics, the UNR921CG0L is an ideal choice for any circuit design which requires an efficient and reliable amplification or switching element.

The UNR921CG0L transistor is also suitable for use in a variety of lighting applications. With its built-in pre-bias feature, the UNR921CG0L is ideal for powering LED arrays for various backlighting and illumination applications. Additionally, the UNR921CG0L can be used in automotive systems, HVAC systems, and medical device applications.

UNR921CG0L Working Principle

The UNR921CG0L transistor is a single, pre-biased BJT. This type of transistor has an intrinsic base-emitter forward bias current, known as the minority carrier injection level, which is a function of the transistor geometry and materials. This allows the transistor to switch on faster and with higher efficiency than a normal open-circuit BJT. Additionally, due to its built-in base-emitter forward bias, the LED will operate at much lower current levels than other logic devices, thereby reducing power consumption.

The UNR921CG0L is configured in a common-emitter configuration, meaning that it controls the current flowing from the emitter to the collector. When a current is applied to the base, it will cause the transistor to switch on, allowing current to flow from the emitter to the collector. This, in turn, will create a voltage drop across the collector-base junction, thus controlling the output current.

The UNR921CG0L\'s pre-biased feature is advantageous because it gives the transistor an inherent ability to quickly switch on and off due to the intrinsic base-emitter forward bias current. The pre-biased feature also allows the transistor to operate at lower currents and voltages, thereby reducing power consumption. For example, in a backlighting application, the UNR921CG0L can switch on and off quickly while a regular BJT may take a longer time to turn on and off.

Conclusion

The UNR921CG0L is a single, pre-biased BJT which offers a range of benefits for a variety of applications. Its pre-biased feature allows it to operate at low current and voltages, reducing power consumption and providing high-speed switching. This transistor is ideal for audio, video, communication, lighting, HVAC and medical applications.

The specific data is subject to PDF, and the above content is for reference

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