UNR921CJ0L Allicdata Electronics

UNR921CJ0L Discrete Semiconductor Products

Allicdata Part #:

UNR921CJ0LTR-ND

Manufacturer Part#:

UNR921CJ0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR921CJ0L datasheetUNR921CJ0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1
Description

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UNR921CJ0L transistors belong to the transistors\' bipolar junction transistor (BJT) category, single, pre-biased type. The BJT transistors feature NPN bipolar type, and have an epitaxia silicon. This type of transistor is a low-frequency amplifier for small signal applications in the low-voltage and medium-power range.

UNR921CJ0L transistors have several distinct characteristics: they have a low-noise TO-92 package; they have a high-performance Darlington-style amplifier; they have an ESD protection of -400V minimum; they have a collector-emitter voltage of 120V (maximum) and a collector current of 100mA (maximum).

The working principle of UNR921CJ0L transistors is as follows: two bipolar transistors (BJTs) are connected in a “Darlington” configuration. In this configuration, each transistor works as an amplifier for the other if current is applied to the base of transistor one. Transistor one’s base-emitter junction is forward biased, allowing a current to flow from the base to the collector, creating an enlarged current. This amplified current also flows from transistor two’s collector to the base of transistor one. As a result, the equivalent current gain (hfe) of the two transistors connected in a Darlington configuration is substantially higher than the gain of each transistor operating separately.

UNR921CJ0L transistors are used in different applications. They are used in many consumer electronics products, such as TVs and DVD players, as well as, more recently, in computer components, including audio amplifiers and other consumer applications. In addition, UNR921CJ0L transistors are used as an important element in various industrial circuits, including motor control, and as amplifying elements in analog circuits, such as pre-amplifiers, and amplifiers.

In medical and aerospace applications, UNR921CJ0L transistors are used in power circuits, as well as in RF amplifiers. In the latest developments, UNR921CJ0L transistors have been used to increase the high-frequency performance and reliability of optoelectronic and microwaves applications, as well as in areas of high-frequency communication, such as radios and radios for CB and mobile phone communications.

In conclusion, the UNR921CJ0L transistor is a highly reliable and efficient pre-biased transistor that can be used in numerous applications. It is a single, low-frequency amplifier and provides excellent performance in a wide variety of electrical applications. Due to these characteristics, it can be employed in different types of circuits and for a wide range of applications, from consumer electronics to industrial and aerospace uses.

The specific data is subject to PDF, and the above content is for reference

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