UNR921TG0L Allicdata Electronics

UNR921TG0L Discrete Semiconductor Products

Allicdata Part #:

UNR921TG0LTR-ND

Manufacturer Part#:

UNR921TG0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR921TG0L datasheetUNR921TG0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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UNR921TG0L Application Field and Working Principle

UNR921TG0L is a type of single, pre-biased, bipolar junction transistor (BJT). These devices are special type of transistors that combine the features of two types of semiconductors, such as n-type and p-type materials. These transistors are well known for their ability to amplify current and voltage.

Application Field

UNR921TG0L transistors are used in many areas of electronics. They are used in a wide range of applications such as radio frequency (RF) amplifiers, audio amplifiers, power amplifiers and video amplifiers. These kinds of transistors are also used in a variety of consumer products such as digital TV receivers, DVD players and computer monitors.

In addition, these types of transistors are used for transmitting signals and for controlling systems such as logic gates and AC motors.

Working Principle

UNR921TG0L transistors work in the same way as other transistors. A single, pre-biased transistor consists of three terminals: the base, the collector and the emitter.

The base terminal is created by doping a semiconductor material. An electric current is then applied to the base allowing electrons to flow. The current is then split into two components, one going to the collector terminal and another to the emitter terminal.

When a voltage is applied to the base terminal, the current flow can be amplified. For example, when a small current is applied to the base of the transistor, the collector current can be ten times higher than the one applied to the base. This is known as current gain.

The voltage also determines the current flow in the base and collector. If the base-emitter voltage is too high or low, the current flow may fail or the transistor may fail to work. This phenomenon is known as saturation voltage.

The specific data is subject to PDF, and the above content is for reference

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