UNR921VJ0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR921VJ0LTR-ND |
Manufacturer Part#: |
UNR921VJ0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR921VJ0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1.5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR921VJ0L is a single pre-biased bipolar junction transistor (BJT). This type of transistor is used in many applications. It is a low voltage, low frequency amplifier, drivable with high current, and has multiple uses in varied applications such as modulation and switching.
The UNR921VJ0L is constructed with a collector, emitter, and two base terminals. The emitter and the collector are made up of P-type semiconductor material and the two base terminals consist of N-type material. When a voltage is applied to the base, it is then able to control the current that flows from the emitter to the collector. This is known as the forward bias. A resistance is also present at the base and collector, known as the base-collector resistance.
The transistor is pre-biased, which means that the bias voltage is already preset and does not have to be externally provided. This simplifies the design of the device and makes it easier to construct. When the voltage at the base changes slightly from the preset bias voltage, current is allowed to flow and the device can be used to amplify signals.
The majority of the applications where the UNR921VJ0L transistor may be used involve high frequency and switching. One of the most common uses is as a switchin modulator. In this instance, the transistor is used to turn on and off a high frequency signal at a defined rate, modulating the signal and producing an output at a frequency similar to the input signal.
The UNR921VJ0L may also be used in switching applications, such as when controlling a motor. When the voltage at the base changes from the preset, the transistor will turn on or off the power to the motor, allowing it to be switched on or off quickly and efficiently.
The UNR921VJ0L is also used in high frequency oscillator circuits. This type of circuit uses a transistor to generate a frequency that can be adjusted. By controlling the bias voltage of the transistor, the frequency can be varied, allowing the circuit to work with different applications that require different frequencies.
In conclusion, the UNR921VJ0L is a single pre-biased bipolar junction transistor (BJT). Its low voltage, low frequency amplifier capabilities, and ability to be drivable with high current provide a powerful tool for application fields such as modulation and switching. Its pre-biased design allows for quick switching, and its ability to be used in high frequency oscillator circuits makes it a versatile device for various applications.
The specific data is subject to PDF, and the above content is for reference
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