UNR92A3G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR92A3G0LTR-ND |
Manufacturer Part#: |
UNR92A3G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR92A3G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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UNR92A3G0L is a type of bipolar junction transistor (BJT). BJT is a type of three-terminal semiconductor device that amplifies current, mainly used as an electronic switch. UNR92A3G0L is a single, pre-biased device. It is also referred to as an avalanche transistor, because it is a special type of BJT that can generate current in a single-ended configuration if it is biased correctly.
The controls for the UNR92A3G0L include the base, collector and emitter terminals. The base terminal consists of a semi-conducting layer, the collector is a metal contact, and the emitter is connected to the source of the current. The collector electrode is connected to the source of the current, while the emitter is connected to ground.
The UNR92A3G0L has a wide range of applications. One of the main uses of the device is to provide current gain in circuits. As a result, the device can be used in amplifiers, radio receivers and other kinds of radio devices. It can also be used in various types of analogue circuits, such as multivibrators and voltage controlled oscillators (VCOs).
The basic working principle of the UNR92A3G0L can be explained as follows. When the base-emitter voltage is applied to the device, a current will flow through the base-emitter junction, and the current will be amplified by the collector-emitter junction. The collector-emitter junction acts like a switch, as it will allow current to flow when the base-emitter voltage is applied. This type of transistor also allows the use of a single supply voltage, which provides a cost-effective solution.
In conclusion, the UNR92A3G0L is a single, pre-biased transistor that offers a range of applications. The device amplifies current and the collector-emitter junction acts as an electronic switch. The device can be used in amplifiers, radio receivers and other types of circuits. The working principle of the device is based on applying a base-emitter voltage, which allows the collector-emitter junction to act as a switch.
The specific data is subject to PDF, and the above content is for reference
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UNR9211J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
UNR9111G0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
UNR9210J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
UNR9113J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
UNR9213J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
UNR9111J0L | Panasonic El... | -- | 1000 | TRANS PREBIAS PNP 125MW S... |
UNR9218J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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UNR9216J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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UNR9212J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
UNR9119J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
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UNR911EJ0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS PNP 125MW S... |
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