UNR92A4G0L Allicdata Electronics

UNR92A4G0L Discrete Semiconductor Products

Allicdata Part #:

UNR92A4G0LTR-ND

Manufacturer Part#:

UNR92A4G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR92A4G0L datasheetUNR92A4G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR92A4G0L transistor is a single, pre-biased bipolar junction transistor (BJT) designed for high-voltage applications. The device offers low power dissipation and low input/output capacitance for superior signal fidelity. The UNR92A4G0L is designed for use in power control and signal switching applications such as automotive and industrial electronics systems, and is typically employed in high-frequency, high-power industrial control systems.

A bipolar junction transistor (BJT) consists of three layers of semiconductive material. The first two layers, the base and collector, form a p–n junction, while the third layer, the emitter, is a thin, highly doped semiconductor material. The UNR92A4G0L captures electrons in its base layer, allowing an electric current to flow through the emitter layer when a voltage is applied. This current then passes through the collector layer and out of the device, creating an amplified version of the original signal.

The pre-biased characteristic of the UNR92A4G0L allows for simple, straightforward implementation in its given application. The pre-bias is typically set to the optimal operating conditions of the device, allowing the user to forego having to balance the circuit\'s components to attain the desired performance. With the pre-bias settings in place, the device has the ability to maintain accurate operation over a wide temperature range and voltage supply.

The UNR92A4G0L transistor is designed for high-voltage operations, providing superior switching performance for power control and signal switching applications. With its capabilities to extend the voltage range in high-powered industrial automation, the UNR92A4G0L has the capacity to improve the efficiency of the motor control system, increase system reliability, and reduce overall system size.

The UNR92A4G0L is also an excellent choice for applications where power efficiency is a primary concern. Its low power dissipation and low input/output capacitance combined with its high switching speed make the device a reliable, low-power option for use in many electronic systems. The device is also designed for low-temperature operation, ensuring it stays functional even in extreme environmental conditions.

The UNR92A4G0L is a valuable choice for many industrial applications due to its combination of performance and power efficiency. With a wide variety of applications, the device can provide reliable operation in high-voltage systems while also reducing power consumption, saving energy and increasing system reliability.

The specific data is subject to PDF, and the above content is for reference

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