Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	510 Ohms
Resistor - Emitter Base (R2):	5.1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

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UNR92A8G0L Application Field and Working Principle

The UNR92A8G0L is a single, pre-biased bipolar junction transistor (BJT). This device is designed for use in a wide range of applications like switching and linear regulation, as well as power control applications. It can be used in a variety of applications, including audio and power amplifiers, automotive applications and for medical instrumentation. This device is suitable for use in various types of electronic components, such as logic, linear and radio frequency circuits.The UNR92A8G0L is a high power BJT with a collector current up to 100A. It has a high breakdown voltage of 135V, which makes it ideal for use in power amplification and setting applications. The device has a temperature range of -55°C to125°C and can operate at frequencies up to 200MHz. The device also offers excellent stability and reliability with an average switching time of 10μs.The working principle of the UNR92A8G0L is the same as other BJTs. A voltage is applied between its base and emitter, and a current begins to flow through the emitter-base junction. The current then continues to flow through the base-collector junction as well. This movement of current creates an amplified voltage at the collector of the device. This amplified voltage can be used to control the flow of current in a circuit.The UNR92A8G0L also features a built-in pre-biased diode, which allows for more efficient switching applications. This diode serves as an initial voltage source to the device, allowing for reduced power losses and switching losses. The pre-biased diode also reduces the device’s capacitance and helps to improve response time for switching applications.The UNR92A8G0L is an ideal device for use in a variety of applications, including audio and power amplifiers, automotive applications and medical instrumentation. Its wide range of applications, high performance, and cost-effectiveness make it suitable for a wide range of different applications. The device provides reliable switching with high-speed operation and excellent noise immunity, making it an ideal choice for many different applications.In summary, the UNR92A8G0L is a single, pre-biased bipolar junction transistor (BJT) designed for a wide range of applications. It offers excellent performance and reliability, with an operating frequency of up to 200MHz, a temperature range of -55°C to 125°C and a collector current of up to 100A. The device also features a built-in pre-biased diode, which improves response time and helps reduce switching losses. The wide range of applications, high performance, and cost-effectiveness of the UNR92A8G0L make it ideal for a variety of applications, including audio and power amplifiers, automotive applications and medical instrumentation.

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