UNR92AFG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR92AFG0LTR-ND |
Manufacturer Part#: |
UNR92AFG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR92AFG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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Transistors are a type of semiconductor device commonly used to amplify or switch electrical signals. The UNR92AFG0L is a single, pre-biased bipolar junction transistor (BJT). It is able to regulate current or voltage flow and is used in a wide range of applications, such as telecommunications, high-voltage switching and power management.
A BJT consists of three layers of doped semiconductor material that form a two junction dipole. It consists of two PN-junctions, one between the emitter and the base and one between the base and the collector. The base junction is the narrowest and most heavily doped, giving it the highest resistance to current flow. The collector junction has the lowest resistance to current flow and the greatest ability to amplify a signal. The UNR92AFG0L has a low collector-base breakdown voltage (Vcb) of 6V and a maximum collector-emitter voltage (Vce) of 6V.
This transistor is pre-biased, which means that it is biased so that it will work efficiently and with minimal power consumption. The bias voltage is applied between the base and emitter and can be adjusted for different applications. It operates in active mode, which means that it can be activated and deactivated by controlling the current flow through the base. This type of BJT also has a low turn-off time, allowing it to switch quickly and efficiently. When the current to the base is reversed, the transistor will be turned off.
In terms of its applications, the UNR92AFG0L can be used in a number of electronic circuits, such as in audio output stages, digital signal processing, and power management. It is also used in lamp drivers, battery chargers, and voltage regulators. It can be used in high-voltage switching due to its low Vcb, allowing it to control the current flow between two components.
In conclusion, the UNR92AFG0L is a single, pre-biased bipolar junction transistor that is used in a wide variety of applications. Its low Vcb and Vce allow it to be used in high-voltage switching, while its active mode and low turn-off time make it ideal for audio output and power management. Its pre-biased construction ensures that it requires minimal power, while its wide range of applications makes it a useful and versatile component.
The specific data is subject to PDF, and the above content is for reference
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