Allicdata Part #: | UNR92AVG0LTR-ND |
Manufacturer Part#: |
UNR92AVG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR92AVG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1.5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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UNR92AVG0L is a single, pre-biased bipolar transistor (BJT). While they have many applications, they are primarily used in low-voltage switching and automotive applications. This type of transistor offers an economical solution to low voltage and moderate current applications.
As a pre-biased transistor, it is pre-configured to provide an output current when a control signal is applied to the gate terminal. This property allows designers to use the transistor with only one AC power source, eliminating the need for a DC power source. The UNR92AVG0L can also be used in application fields requiring two DC power supplies, such as switching power supplies.
The working principle of the UNR92AVG0L is based on the principle of BJT transistor operation. It is built with three terminals; the base, collector, and emitter. When a current is applied to the base terminal, the transistor becomes electrically active and starts to conduct. The collector terminal then receives an amplified current (output current) due to the current gain of the transistor. The amount of current gain is controlled by the predetermined amount of current fed to the base. The emitter terminal allows a small portion of the collector current to flow back to the base by providing an electrical connection back to the base.
The collector-emitter (CE) of the UNR92AVG0L has a breakdown voltage of 5V, which is suitable for applications that require a low-voltage connection. Additionally, its current gain (hFE) ranges from 40 to 150, depending on the predominant type of BJT transistor chosen. Of course, the hFE is also affected by temperature, loading, and other operating conditions.
The UNR92AVG0L is generally considered to be a moderate current device with an output current of up to 0.5 A. It is capable of providing voltage gains up to 500V in certain applications. Its relatively high power capability, combined with its low pre-bias current, makes it an ideal choice for applications such as motor control, automotive motor switching, and low-voltage switching.
The UNR92AVG0L is also popular for applications involving noise suppression. Its wide range of parameters, including hFE and other characteristics, make it suitable for low power control and signal processing applications. Additionally, the transistor is available in several varieties, with different properties and performances depending on the usage.
The UNR92AVG0L is an economical and reliable solution for applications requiring low voltages and moderate currents. With its pre-biased operation and its moderately high-power capability, it is perfect for many low-cost, low-power switching and automotive applications. Furthermore, its wide range of hFE and other characteristics makes it suitable for a variety of noise suppression and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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