UPA2379T1P-E1-A Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The UPA2379T1P-E1-A is a device used in transistors such as Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). This device is arranged in an array, making it very suitable for the efficient integration of multiple logic gate functions and power management applications. This article will describe the application field and working principle of this device in detail.

The UPA2379T1P-E1-A integrates four separate output MOSFETs into a single package, thus making it ideal for power supply applications. Each of these MOSFETs is rated to sink 1A of current and can reach a drain-source voltage of up to 20V. This means that the device is expetionaly suitable for various power supply applications such as DC-DC converters, motor driving circuits and high current control circuits. The device also features built-in ESD protection, eliminating the need for additional hardware.

The UPA2379T1P-E1-A has a wide operating temperatue range of -40 to +95 degrees Celsius, meaning that it can be used in a variety of different environmental conditions. This also makes the device exceptionally reliable and long-lasting, which is another benefit of using the UPA2379T1P-E1-A for power management applications.

The UPA2379T1P-E1-A has a wide range of features that make it ideal for various applications. It is a low on-resistance MOSFET and has a high power dissipation of up to 2.6W. Furthermore, it has a low input capacitance, allowing it to be used in high speed power MOSFET applications. In addition, the device has a low gate charge and fast switching times. The UPA2379T1P-E1-A can support up to 150mA of gate current, making it a suitable solution for switching circuits that require higher currents.

In terms of its working principle, the UPA2379T1P-E1-A is a four transistor array that integrates four separate active MOSFET layers and is connected together with a common gate contact. This allows the device to have an input voltage and output current controlling capability, making it exceptionally useful in power management applications. The device also features built-in ESD protection, allowing the user to control the current in their circuits more effectively.

The UPA2379T1P-E1-A is a very useful device, as it has a wide array of features and a very robust design. The device\'s wide operating temperature range allows it to be used in diverse environmental conditions. Furthermore, the device has low input capacitance, allowing it to be used as a high-speed power MOSFET. The UPA2379T1P-E1-A can be used for a wide variety of power management applications, which makes it an ideal choice for those looking for a reliable and long-lasting solution for their power management requirements.

The specific data is subject to PDF, and the above content is for reference