UPA2813T1L-E2-AT

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UPA2813T1L-E2-AT is a N-channel enhancement mode vertical DMOS transistor. It has a wide range of applications, including amplification, synchronization, linear and switch modulators, power switching, and spacecraft power systems.

The UPA2813T1L-E2-AT features a simple two-terminal control-gate structure. The source and gate are connected to the drain through a P-type metal-oxide-semiconductor field-effect transistor (MOSFET). The metal-oxide gate provides good breakdown voltage and low on-resistance.

The base doping concentration of the substrate is higher than that of the gate, so when the substrate is biased in the proper direction a channel forms between the source and the gate. The higher the channel bias the lower the resistivity of the channel. This creates a low-resistance path between the source and gate, allowing current flow through the MOSFET.

The main advantage of using a MOSFET is its low on-resistance. This allows for efficient power conversion with minimal power loss. Additionally, the channels in a MOSFET are infinitely adjustable, allowing for precise voltage or current control and modulating. This is especially useful in sophisticated applications such as analog signal processing and switching.

The UPA2813T1L-E2-AT device can provide up to 1.2A of continuous drain current and 5A of peak drain current while allowing a maximum drain-source voltage of 20V. It requires a low gate threshold voltage of 3V and operates with a typical on-resistance of 7mΩ. The device has a conventional hermetically sealed package with a lead-free solderable surface.

The UPA2813T1L-E2-AT is suited for applications that require high efficiency power conversion. It is particularly suitable for switch modulators, high frequency converter circuits, current sensing, power supply circuits, communication systems, and digital systems. It also can be used in spacecrafts and satellites for providing power in a robust environment.

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