UPA2631T1R-E2-AX

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Introduction

UPA2631T1R-E2-AX is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that is widely used for a variety of electronic switching applications. It is one of the few power MOSFETs (pMOSFETs) available in the market that offers high compatibility with other gate drivers and featuring minimal power losses during switching. UPA2631T1R-E2-AX is a "n-channel enhancement mode transistor" that offers a high drain current rating of 26A, a high drain-source voltage of 250V, and a total gate charge of 46 nC. This MOSFET is also available in both TO-92 and TO-263 packages, making it a suitable choice for both compact and bulky applications.

Application Field

UPA2631T1R-E2-AX is primarily used for switching applications in medium- and high-power circuit designs. It is suitable for use in high-current applications, due to its high drain current (Id: 26 A) rating, and its high drain-source voltage (Vds: 250 V). It is also capable of handling high surge currents up to 50 A and is suitable for high-frequency operation. Some of the applications that can benefit from the use of this MOSFET include motor control, instrumentation, HVAC systems, power system monitoring, brushless DC motor drives, and other power electronics applications.

UPA2631T1R-E2-AX is especially suitable for pulse-width modulation (PWM) applications, due to its very low Rds(on) value of 0.14 W. This makes it a very efficient choice for controlling the speed of motors, as well as for lowering noise levels in electronic circuits. By replacing standard BJTs with the UPA2631T1R-E2-AX, the throughput of an electronic circuit can be increased significantly.

Due to its low total gate charge (Qg: 46 nC) and fast turn-on and turn-off time, the UPA2631T1R-E2-AX is also capable of switching rapidly and accurately, making it suitable forTimer/counter applications, as well as temperature-controlled systems. In addition, because of its low capacitance of 11 pF, it is suitable for very high-speed switching applications, such as transmission gate circuits and clock distribution networks.

Working Principle

A MOSFET is an electronic device that works based on the principle of "Detecting the Gate Voltage" to operate. This principle states that by applying a gate voltage (VG) to the gate region of the MOSFET, current carriers in the form of electrons can be induced due to the attractive force of the electric field created by the applied gate voltage. When the gate voltage reaches the threshold voltage of the MOSFET, it will allow the current carriers to flow from the source terminal to the drain terminal, creating a current flow. This current flow is known as drain current (ID) and is directly proportional to the gate voltage applied on the gate region of the MOSFET.

UPA2631T1R-E2-AX is a n-channel enhancement-mode MOSFET, meaning that the gate voltage applied must be greater than the threshold voltage (VTH) to induce current carriers. The MOSFET will remain open (on-state) until the gate voltage falls below the threshold voltage, at which time it will switch to its off-state. This MOSFET uses an internal gate resistor, which limits the current flowing through the gate of the MOSFET when a reverse bias is applied to the gate region.

UPA2631T1R-E2-AX has a low on-resistance of 0.14 W, which makes it suitable for high-current applications. This MOSFET also has a fast turn-on and -off time and low total gate charge, which makes it suitable for switching applications and timer/counter applications. Furthermore, its low capacitance of 11 pF makes it suitable for high-speed switching applications.

Conclusion

UPA2631T1R-E2-AX is a n-channel enhancement-mode MOSFET with a low total gate charge (Qg: 46 nC) and low on-resistance (Rds(on): 0.14 W). It has a high drain current (Id: 26 A) rating and a high drain-source voltage (Vds: 250 V). Its fast turn-on and -off time, low capacitance of 11 pF, and low total gate charge make it well-suited for a variety of applications such as high-current switching, pulse-width modulation, temperature-controlled systems, and high-speed switching applications. As such, UPA2631T1R-E2-AX has become a popular choice for medium- and high-power circuit designs.

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