Allicdata Part #: | UPA2815T1S-E2-AT-ND |
Manufacturer Part#: |
UPA2815T1S-E2-AT |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 30V 21A 8HWSON |
More Detail: | P-Channel 30V 21A (Tc) 1.5W (Ta) Surface Mount 8-H... |
DataSheet: | UPA2815T1S-E2-AT Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.29775 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-HWSON (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1760pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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UPA2815T1S-E2-AT is a single-channel depletion-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is mainly used in automotive and industrial relay-switched systems, signal conditioning, switching power supplies, switching regulators, and other power management applications. The UPA2815T1S-E2-AT has very low coefficient of on-off resistance and offers very low on-resistance at frequencies up to 100 kHz. The device also features extremely low gate charge and input-output capacitance.
The working principle of a MOSFET can be summarized in four stages. First, the bias voltage applied to the gate controls the number of electrons (or holes) that exist between the source and drain. This causes a change in the width of the depletion region which then affects the resistance between the source and drain. Second, the depletion region controls the amount of current that can flow between the source and drain. Third, the source-drain voltage and the gate voltage controls the width of the depletion region and hence the amount of current flowing between the source and drain. Finally, the fourth stage is the off state when no current flows through the device.
The UPA2815T1S-E2-AT is an ideal choice for applications that require very low power consumption and low on-resistance. The device is suitable for operating temperatures up to 125°C and can be used in automotive and industrial applications. For example, the UPA2815T1S-E2-AT can be used in relay-switched systems, signal conditioning, switching power supplies, and switching regulators. The device also features a low gate charge and small parasitic capacitance which makes it suitable for applications that require high-speed switching.
The device is also capable of operating in depopulation mode, allowing it to be used in low-voltage, low-power applications where it is important to reduce current consumption. Depopulation mode can be used to reduce the total on-resistance of the device, providing more efficient operation. Depopulation mode also reduces the amount of power dissipated by the device, protecting it from thermal damage.
In conclusion, UPA2815T1S-E2-AT is a single-channel depletion-mode MOSFET designed for automotive and industrial applications. It is capable of operating at high frequencies and at high temperatures up to 125°C. The device offers very low on-resistance and low gate charge, and it also features depopulation mode, making it suitable for low-power applications. Overall, the UPA2815T1S-E2-AT is an ideal choice for powering devices that require low-power consumption and high performance.
The specific data is subject to PDF, and the above content is for reference
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