UPA2738GR-E1-AT Allicdata Electronics
Allicdata Part #:

UPA2738GR-E1-AT-ND

Manufacturer Part#:

UPA2738GR-E1-AT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 30V 10A 8SOP
More Detail: P-Channel 30V 10A (Ta) 1.1W (Ta) Surface Mount 8-S...
DataSheet: UPA2738GR-E1-AT datasheetUPA2738GR-E1-AT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The UPA2738GR-E1-AT is a high power field effect transistor (FET) used in a range of applications due to its wide range of features and attractive cost. It is a single N-Channel enhancement mode power MOSFET designed to operate in high temperature operating environments. It is constructed with an overall power switch output structure, providing superior electrical performance and increased efficiency.

The UPA2738GR-E1-AT is an ideal solution for a variety of applications that require high power switching capabilities, such as high power audio amplifiers, automotive applications, and energy management applications. It is designed to operate with a wide range of voltage levels, which allows it to be used in a multi-voltage circuit. It is also designed to reduce EMI noise, making it suitable for low noise, high power circuits. This FET also has a very low on-state resistance, which increases efficiency in power distribution applications.

The UPA2738GR-E1-AT is constructed out of high quality silicon and is rated for operation up to 175°C. It offers a variety of protection features such as over temperature protection, over voltage protection, over current protection and load dump protection. These features make it very reliable in high temperature and high current circuits.

The UPA2738GR-E1-AT operates in a three-level power configuration, with an input section providing input power to the FET, an output section regulating the output power, and a control section that is used to control the FET. When the FET is powered, the input section supplies a certain amount of voltage to the gate of the FET, which acts like a capacitor and regulates the current flow through it. The output section is connected to the drain of the FET, and the voltage that is regulated by the gate of the FET is requested from the output section. The control section is connected to the gate of the FET, allowing it to control the operation.

This FET can be used in a variety of different applications due to its characteristics and features. Some of the most popular ones include motor control, power management, automotive applications, LED lighting, and energy management. It is also used in switch mode power supplies, household and industrial electronics, telecom equipment, air conditioning systems, and industrial motor drives.

The UPA2738GR-E1-AT is a great choice for a variety of applications due to its durable construction and powerful switching capability. Its high performance and advanced protection features make it a reliable choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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