Allicdata Part #: | UPA2735GR-E1-AT-ND |
Manufacturer Part#: |
UPA2735GR-E1-AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 30V 16A 8SOP |
More Detail: | P-Channel 30V 16A (Ta) 1.1W (Ta) Surface Mount 8-S... |
DataSheet: | UPA2735GR-E1-AT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-PowerSOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6250pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
UPA2735GR-E1-AT is a power MOSFET made by Panasonic. It is a single P-Channel enhanced mode MOSFET which has been designed for use in a wide range of power ranges from 0.1 watts to 18 watts. It consists of a high breakdown voltage of -30V at a gate-source voltage of -12V. It has a continuous drain current of 3.75A and a maximum pulsed drain current of 17.5A. It is highly resistant to surge current and has a low gate charge.
Application Field
This MOSFET is commonly used in switching converters, low voltage, high current circuits, and high voltage applications. It is also used in applications where high breakdown voltage is required and where high power efficiency is desired. It has been used in motor driver applications, AC/DC power supplies, and other power devices. It is especially suitable for switching converters and is also useful for high current applications where low on-resistance is essential.
Working Principle
UPA2735GR-E1-AT is a power MOSFET. The MOSFET is a field-effect transistor (FET) which operates on the principle of a conducting channel between the source and drain terminal when a voltage is applied to the gate terminal. The voltage at the gate terminal causes electrons to accumulate in the channel, and this will in turn reduce the resistance between the source and drain terminal. In the UPA2735GR-E1-AT, the gate voltage is -12V which causes electrons to accumulate in the channel and reduce the resistance. The higher the resistance between the source and drain, the greater the amount of current that can be passed. In this MOSFET, the on-resistance is as low as 0.8 mΩ and can be used for a wide range of power applications.
Conclusion
The UPA2735GR-E1-AT is a single P-Channel enhanced mode MOSFET made by Panasonic. It has a high breakdown voltage of -30V at a gate-source voltage of -12V and a low on-resistance of 0.8 mΩ. It is used in a wide range of power applications, including switching converters, low voltage, high current circuits, and high voltage applications. It is suitable for motor driver applications and AC/DC power supplies. It operates on the principle of a conducting channel between the source and drain terminal when a voltage is applied to the gate terminal, allowing for a high power efficiency.
The specific data is subject to PDF, and the above content is for reference
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