Allicdata Part #: | UPA2814T1S-E2-AT-ND |
Manufacturer Part#: |
UPA2814T1S-E2-AT |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 30V 24A 8HWSON |
More Detail: | P-Channel 30V 24A (Tc) 1.5W (Ta) Surface Mount 8-H... |
DataSheet: | UPA2814T1S-E2-AT Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.33533 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-HWSON (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 24A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UPA2814T1S-E2-AT is a type of field effect transistor (FET) that is specifically designed for automotive applications. It is a single N-channel MOSFET with a drain-source breakdown voltage of 28 volts and a drain current rating of 6 amperes. It features a low on-resistance specification of 0.016 ohms, making it an ideal choice for applications with high power and speed. Furthermore, its low gate charge, gate charge temperature coefficient and threshold voltage make it an excellent option for designs that require minimal input power.
While the UPA2814T1S-E2-AT is typically used for automotive applications, its capabilities make it suitable for a range of other applications. Its low on-resistance and high current rating make it suitable for applications where power dissipation is important, such as DC-DC converters and switched power supplies. In addition, its high breakdown voltage and low gate charge make it ideal for applications such as voltage regulators, low-noise amplifiers, calibrators and signal conditioners.
The working principle of the UPA2814T1S-E2-AT is based on electron flow. In an N-channel FET, an electric field created by the gate terminal is used to control the number of electrons flowing from source to drain. The electric field reduces the potential barrier between the source and drain, allowing electrons to flow more freely. This allows the transistor to act as a switch in both digital and analog applications.
When the gate voltage is low, the transistor is OFF and does not allow current to flow. When the gate voltage is high, the barrier between the source and drain is lowered and the transistor is ON, allowing current to flow from source to drain. This makes the transistor an ideal device for applications where adjustable current control is needed. Additionally, the device is fast switching, allowing for high-speed applications.
In conclusion, the UPA2814T1S-E2-AT is a single N-channel MOSFET suitable for a wide range of applications, such as DC-DC converters, voltage regulators, low-noise amplifiers, calibrators and signal conditioners. It has excellent characteristics, such as a low on-resistance and high current rating, as well as a low gate charge, making it an ideal choice for high-power and high-speed applications. In terms of its working principle, the UPA2814T1S-E2-AT is based on a gate voltage that controls the electron flow between source and drain, allowing it to act as a switch in both digital and analog applications.
The specific data is subject to PDF, and the above content is for reference
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