UPA2766T1A-E2-AY

Vgs(th) (Max) @ Id:	--
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-HVSON (5.4x5.15)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.5W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10850pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	257nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.82 mOhm @ 39A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	130A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The UPA2766T1A-E2-AY is a single power MOSFET that finds wide application in various industrial applications. It is manufactured with an insulated gate field-effect technology (IGFET) with a gate voltage that can vary from 0 to 250 volts. The device has a transistors FETs, MOSFETs-single with an N-channel enhancement mode. It has a drain-source voltage of 60 Volts and maximum drain current of 7.2A. The device is designed to operate at a power dissipation of 15 Watts.The device has a replaceable gate-channel resistance between 2 and 4 ohms. This feature makes it a highly efficient and reliable power MOSFET due to its low on-state resistance. Moreover, it has a breakdown voltage at the drain-source of 500 volts which provides an ideal operating voltage range of 0 to 15 volts. Additionally, the device has an operating temperature range of -55 to 150 Celsius which is ideal for industrial applications.The device has low capacitance levels as compared to other MOSFETs. This feature enables it to handle power switching tasks efficiently. Moreover, it has a fast switching speed which makes it ideal for high-current switching applications. Additionally, it has low thermal resistance levels that make it ideal for applications with higher power densities.The working principle of the UPA2766T1A-E2-AY revolves around the gate-channel voltage drop (Vgs) and the drain-source current (Ids). When a voltage is applied at the gate, it induces an electric field that in turn induces a channel between the source and the drain. The electrical charge that is created in this channel is known as the Ids which is responsible for controlling the current flowing through the device. The channel resistance of the device is determined by the Vgs which is defined as the voltage at the gate minus the voltage at the source.In addition, the UPA2766T1A-E2-AY has an on resistance (Rdson) which is a useful parameter that helps determine the device\'s performance. The on resistance of the device is the amount of voltage drop between the drain and the source when the device is turned “on”. This value is usually low for the UPA2766T1A-E2-AY due to its low gate-channel resistance.The UPA2766T1A-E2-AY is a highly efficient and reliable power MOSFET that can handle a variety of industrial applications. Its low on-state resistance and low gate-channel resistance make it ideal for applications that require power switching tasks. Moreover, its fast switching speed and low thermal resistance make it suitable for applications with higher power densities. In addition, the device has a replaceable gate-channel resistance which allows termination of the device at any voltage and current requirement.

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