| Allicdata Part #: | UPA2737GR-E1-AT-ND |
| Manufacturer Part#: |
UPA2737GR-E1-AT |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET P-CH 30V 11A 8SOP |
| More Detail: | P-Channel 30V 11A (Ta) 1.1W (Ta) Surface Mount 8-S... |
| DataSheet: |  UPA2737GR-E1-AT Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.23670 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-SOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1750pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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UPA2737GR-E1-AT is a high performance P-channel composition FET featuring low ON resistance. It is suitable for use in applications requiring very low ON-state resistance and low gate charge, such as battery powered systems, portable devices and LED lighting AC/DC converters.
Application Field
UPA2737GR-E1-AT is primarily suitable for high frequency switching applications, such as PWM controllers, DC-DC converters and audio amplifiers. The low ON-state resistance and low gate charge of this FET make it an ideal choice for power switching applications. The device also features high-speed switching performance and improved switching stability. It is especially well suited for automotive electronic systems and portable electronic devices due to its low power consumption and low switching noise.
Working Principle
Like other FETs, UPA2737GR-E1-AT also works on the principle of voltage control of current. A voltage is applied across the gate and source terminals of this FET, which creates an electric field between the source and the drain. This electric field causes electrons to flow from the source to the drain and carriers of charge from the source to the drain. Thus, current is allowed to flow through the channel. The higher the voltage applied across the gate and source of this FET, the bigger the electric field and hence, the higher the current flow through the channel. By controlling the voltage applied across the gate and source of this FET, the current can be regulated effectively.
Advantages
- Low on-state resistance
- Low gate charge
- Improved switching stability
- High frequency switching
- Low power consumption
Features
- Compliant to RoHS and REACH
- Lead free and green products
- High amplification characteristic
- Low power loss
- High switching performance
The specific data is subject to PDF, and the above content is for reference
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