UPA2764T1A-E2-AY

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The UPA2764T1A-E2-AY is a N-Channel enhancement mode MOSFET which was developed by Toshiba. It has a rated drain current of 10A and drain voltage ratings of up to 50V. This power MOSFET is typically used for high-speed switching applications including motor control, low-loss switching, power supply, and high-efficiency load driving for LCDs and electric devices. With its excellent characteristics such as low on-resistance, fast switching times, and low threshold voltages, this MOSFET offers reliable and efficient performance for a wide variety of applications.

A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a three terminal electronic device made of metal oxide semiconductor materials that are used as semiconductor switches. The metal oxide semiconductor material acts as an insulator between the source and the drain, allowing current to pass through only when a positive voltage is applied to the gate terminal. The MOSFET is thus used as an electronically-controlled switch in various circuitry.

The UPA2764T1A-E2-AY MOSFET operates with a drain-source voltage of 50V, a drain current of 10A, and a gate-source voltage of ±20V. The transistor also offers excellent switching speeds, with a turn-on time of 8ns, a turn-off time of 12ns, and a minimum drain-source on-resistance (RDSon) of 1.2Ω. The low RDSon value makes the MOSFET suitable for use in low-loss switching circuits.

Furthermore, the MOSFET also has a low threshold voltage of 2.0V and a low gate charge of 6.8nC. The low threshold voltage helps reduce power losses and the low gate charge allows for faster switching at higher frequencies. This translates to high efficiency and excellent performance in switching-mode power supply (SMPS) circuits.

The UPA2764T1A-E2-AY can be used in motor control circuits, switching circuits, load drivers for Liquid Crystal Displays (LCDs), high-efficiency power supplies, and many other applications. It is particularly useful for applications that require a fast switching speed and low power loss. Additionally, the MOSFET’s ability to operate at high temperatures makes it suitable for use in harsh environments.

In order to use the UPA2764T1A-E2-AY in a circuit, the gate-source voltage needs to be maintained. Also, the gate must be connected to an appropriate gate driver circuit when the MOSFET is to be used in a switching application. Gate driver circuits provide a powerful gate-source voltage which enables the MOSFET to turn on and off quickly and efficiently.

In conclusion, the UPA2764T1A-E2-AY is an enhancement mode N-Channel MOSFET which is particularly useful for switching and motor control applications. The transistor offers excellent switching speeds, low gate charge, and low RDSon values which make it useful for low-loss switching circuits and high-efficiency power supplies. Additionally, the MOSFET is able to operate at high temperatures which makes it suitable for use in harsh environments. The UPA2764T1A-E2-AY is thus suitable for use in a variety of applications that require fast switching speeds and low power losses.

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