UPA2736GR-E1-AT

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The UPA2736GR-E1-AT is a single N-channel enhancement mode MOSFET (metal oxide semiconductor field effect transistor). It is a power Field Effect Transistor (FET) specifically designed for use in lighting ballast, Inverter/UPS and other power conversion applications as well as Wide Bandgap 3-phase, single-phase and multi-phase AC-DC converters, DC-DC and AC-AC power factor correction systems.

A single N-channel MOSFET like the UPA2736GR-E1-AT consists of a single source to drain channel, which is formed by a semiconductor material layer. A dielectric layer insulates the gate from the channel and this allows for voltage control, where the voltage applied to the gate modulates the current which can pass through it. This type of transistor is commonly used in power conversion due to its ability to switch fast and handle large loads.

The UPA2736GR-E1-AT is a logic-level MOSFET with an I_DS rating of 7A, an S_GS of 5A, and a V_DS rating of 17V. It has a limit of total power dissipation of 278W, an on-resistance rating of 27mOhm, an off capacitance of 1.45CAP, and a maximum junction temperature of 155°C. This makes it an ideal solution for applications such as switching power supply, DC motor drive, and power supply rectification.

Most N-channel MOSFET devices such as the UPA2736GR-E1-AT have a wide range of applications due to their characteristics. They are used in circuits where large currents need to be switched quickly, such as audio amplifiers, DC power supplies, and power-switching applications. Due to their high input impedance and lower power dissipation, they are also suitable for low-power applications such as logic-level circuits and microprocessor-controlled systems. The UPA2736GR-E1-AT is well-suited to these applications due to its low-power dissipation and high-frequency capability. It can operate at frequencies up to 100kHz and operate with a supply voltage of up to 20V.

For its working principle, the UPA2736GR-E1-AT relies on a Gate Voltage V _GS to control the FET\'s conduction. It is a voltage-controlled device with the Gate Voltage V _GS controlling the amount of current allowed to flow from source to drain of the device. As the Gate Voltage is increased, the channel conductance is increased, thus allowing more current to flow through the device. This feature makes the UPA2736GR-E1-AT a very useful device in switching and linear applications, as the voltage control can be used to precisely regulate current and voltage according to the required conditions.

Overall, the UPA2736GR-E1-AT is one of the most widely used and versatile N-channel enhancement mode MOSFETs in the market today. Its high-frequency capability, low-power dissipation and high input impedance make it suitable for a wide range of switching and linear applications. The Gate Voltage V _GS allows precise control over current and voltage and makes the UPA2736GR-E1-AT a perfect solution for power conversion applications.

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