UPA2812T1L-E1-AT

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UPA2812T1L-E1-AT is a single Fast Intrinsic Diode (FID) Discrete N-Channel Enhancement-Mode Field Effect Transistor (FET) designed for automotive, communications and consumer applications. The maximum peak junction temperature permit is 175°C with VT2 of -4.8V to -7.1V and VTF2 of -2.8V to -3.3V. The lack of second level breakdown also limits the output current to a maximum of 12A. The operating temperature range is -55°C to +125°C.

The general application field of the UPA2812T1L-E1-AT FET is mainly in consumer electronics, and is often used to drive high-power circuits, such as large DC-DC converters and motor control circuits. Its small and isolated package makes it suitable for high voltage, high load, and high temperature applications. It also has an optimized thermal characteristics, making it suitable for automotive, lighting and consumer applications.

The working principle of the UPA2812T1L-E1-AT FET is based on the operation of a field-effect transistor (FET). The transistor consists of a gate, a source, and a drain. The voltage applied between the gate and the source of a FET can control the current flow between the source and the drain. A positive gate voltage (Vgs) will increase the current flow, while a negative gate voltage (Vgs) will decrease the current flow. The relationship between the drain current and Vgs is known as the transfer characteristic of the FET. The FET also has an intrinsic diode which limiting the current-carrying into the reverse-bias direction.

In order to achieve high power performance, the UPA2812T1L-E1-AT FET includes a field plate structure which improves its potential breakdown voltage. This feature increases the voltage over-voltage protection, while allowing higher efficiency and improved performance. Additionally, the FET has a fast diode which softens the switching edge and reduces the current ripple, making it suitable for applications operating with hard switching.

The UPA2812T1L-E1-AT FET is versatile and can be used as both a power switch and a linear regulator. When used as a power switch, it is possible to control the current flow at the gate by controlling the gate voltage, meaning that the FET can be used to turn a device on and off. When used as a linear regulator, the FET will limit the current to a predetermined level. This makes it suitable for applications such as voltage regulation and motor control.

In summary, the UPA2812T1L-E1-AT FET is a single Fast Intrinsic Diode (FID) Discrete N-Channel Enhancement-Mode Field Effect Transistor (FET) designed for automotive, communications, and consumer applications. Its general application field is mainly in consumer electronics, and it is often used to drive high-power circuits, such as large DC-DC converters and motor control circuits. The FET works by controlling the current flow between the source and the drain with a gate voltage, and its fast diode softens the switching edge and reduces the current ripple. It is also versatile, as it can be used both as a power switch and a linear regulator.

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