UPA2821T1L-E1-AT Allicdata Electronics
Allicdata Part #:

UPA2821T1L-E1-AT-ND

Manufacturer Part#:

UPA2821T1L-E1-AT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 30V 26A 8HVSON
More Detail: N-Channel 30V 26A (Tc) 1.5W (Ta) Surface Mount 8-H...
DataSheet: UPA2821T1L-E1-AT datasheetUPA2821T1L-E1-AT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-HWSON (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The UPA2821T1L-E1-AT is a high-performance, metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single terminal control device, meaning its switching is triggered by a single input. The UPA series of MOSFETs are designed for use in a wide range of applications, from consumer electronic devices to more industrial applications.MOSFETs function using four main components: a source, a gate, a drain, and a body terminal. The source and drain are both connected to a power source, while the gate terminal forms an electrical pathway between the source and drain. By changing the voltage applied to the gate, the level of current conducted between the source and drain can be adjusted. This is known as the MOSFET’s threshold behavior, which is what sets it apart from other types of transistors.The UPA2821T1L-E1-AT is a zero-threshold MOSFET. This means that there is no minimum gate voltage required to turn on the transistor. It is also a high-efficiency device, meaning it consumes less power than other types of MOSFETs. As a result, it is an excellent choice for applications where power efficiency is a priority.In addition to its impressive power efficiency, the UPA2821T1L-E1-AT is also highly reliable. It has a maximum gate-source voltage of 28V and can handle a maximum drain-source voltage of 60V. Its is relatively low on-resistance of 1.54mOhm, along with its maximum drive current of 5.4A, makes it capable of switching a large amount of current, making it suitable for high-power operations. Furthermore, it has an operating temperature range of -55°C to 125°C, enabling it to function in extreme temperature environments.The UPA2821T1L-E1-AT’s features make it suitable for an extensive range of applications. It is well-suited for powering motor drivers, as well as for use in audio amplification, high speed automation control, and power management. It is also capable of performing pulse width modulation, a technique used to reduce power consumption in many consumer applications, such as in mobile phones and laptop computers.Thanks to its many advantages, the UPA2821T1L-E1-AT is an ideal choice for a wide range of electronic projects. Its excellent power-efficiency, low on-resistance, and wide operating temperature range make it a reliable and versatile device, suitable for powering a variety of applications. With its features and capabilities, the UPA2821T1L-E1-AT is a great choice for anyone looking to build a reliable and powerful device.

The specific data is subject to PDF, and the above content is for reference

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