Allicdata Part #: | UPA2825T1S-E2-AT-ND |
Manufacturer Part#: |
UPA2825T1S-E2-AT |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 8HVSON |
More Detail: | N-Channel 30V 24A (Tc) 1.5W (Ta), 16.5W (Tc) Surfa... |
DataSheet: | UPA2825T1S-E2-AT Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.32762 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-PowerWDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 16.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UPA2825T1S-E2-AT is a type of transistor, specifically a field effect transistor or FET, and belongs to the class of single MOSFETs, or metal oxide semiconductor field effect transistors.
A field effect transistor, or FET, is the modern electronic device that is most often used to control the flow of currents. The UPA2825T1S-E2-AT is a single MOSFET transistor, which means it can be used to amplify and switch signals in a variety of applications such as amplifiers and voltage regulators.
The UPA2825T1S-E2-AT is designed with a drain-to-source breakdown voltage of 28V, a maximum gate-to-source voltage of 20V, and a maximum drain current of 3.3A. This transistor is designed with a packaging size of 0202 and is capable of operating within an ambient temperature range of -40°C to 125°C. It also has an available maximum drain-to-source on-state resistance range of up to 0.42Ω.
The UPA2825T1S-E2-AT is ideal for applications that require enhanced capabilities for amplifying, switching, and regulating signals with minimal distortion. It is widely used in fields such as automation, consumer electronics, medical electronics, and other industries that require precision control and low power requirements.
The UPA2825T1S-E2-AT works by transferring an electrical current from the source to the drain inside the transistor by applying a small electrical signal to the gate. This creates a conductive channel between the drain and the source, allowing current to flow when the gate voltage is above a certain level. When the gate voltage is below this level, the channel is cut off and no current is allowed to flow through.
The UPA2825T1S-E2-AT uses a special type of semiconductor material known as metal oxide semiconductor, or MOS. This material is capable of transferring a greater amount of current across a wide range of gate voltages, making it ideal for applications that require high levels of precision and control.
The UPA2825T1S-E2-AT is reliable, efficient and versatile, making it a good choice for a variety of specific applications. It is an excellent choice for designing applications that require power efficiency, robust performance, and strength in the ability to control and switch electrical current.
The specific data is subject to PDF, and the above content is for reference
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