Allegro full bridge driver - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
497-17547-ND	STF16N60M6	STMicroelectronics	View more Series: UltraFASTmesh Packaging: Tube Part Status: Active Mounting Type: Through Hole Supplier Device Package: TO-220-2 Full Pack Package / Case: TO-220-2 Full Pack	975 Order	1+: $1.6947 50+: $1.3675 100+: $1.2308 500+: $0.9573 1000+: $0.7931
IRFI9530N-ND	IRFI9530N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
SIHA22N60AEL-GE 3TR-ND	SIHA22N60AEL-GE 3	Vishay Siliconix	View more Series: EL Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1000+: $1.42
IPA60R125CFD7XK SA1-ND	IPA60R125CFD7XK SA1	Infineon Technologies	View more Series: OptiMOS Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4.5V @ 390A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1503pF @ 400V Power Dissipation (Max): 32W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	500 Order	1+: $3.0429 10+: $2.7147 100+: $2.2262 500+: $1.8027 1000+: $1.5203
IPA70R450P7SXKS A1-ND	IPA70R450P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 10A Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120A Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 400V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 400V Power Dissipation (Max): 22.7W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	452 Order	1+: $0.7938 10+: $0.7018 100+: $0.5547 500+: $0.4302 1000+: $0.3396
SIHA6N80E-GE3-N D	SIHA6N80E-GE3	Vishay Siliconix	View more Series: E Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 940 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	995 Order	1+: $1.8144 10+: $1.6412 100+: $1.3188 500+: $1.0257 1000+: $0.8499
SIHA11N80E-GE3- ND	SIHA11N80E-GE3	Vishay Siliconix	View more Series: E Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $2.583 10+: $2.3077 100+: $1.8922 500+: $1.5322 1000+: $1.2922
IRFI7446GPBF-ND	IRFI7446GPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 48A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3199pF @ 25V Power Dissipation (Max): 40.5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	4000+: $0.6532
IRFI7440GPBF-ND	IRFI7440GPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 57A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4549pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	4000+: $0.5443
IPA65R400CEXKSA 1-ND	IPA65R400CEXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 320A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $0.564
IPA50R950CEXKSA 2-ND	IPA50R950CEXKSA 2	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Power Dissipation (Max): 25.7W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	228 Order	1+: $0.6111 10+: $0.5368 100+: $0.4141 500+: $0.3068 1000+: $0.2454
IPAN60R800CEXKS A1-ND	IPAN60R800CEXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170A Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 27W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	445 Order	1+: $0.693 10+: $0.6124 100+: $0.4839 500+: $0.3753 1000+: $0.2963
IPAN50R500CEXKS A1-ND	IPAN50R500CEXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	353 Order	1+: $0.7182 10+: $0.6369 100+: $0.5032 500+: $0.3902 1000+: $0.3081
IPA50R280CEXKSA 2-ND	IPA50R280CEXKSA 2	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Power Dissipation (Max): 30.4W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	290 Order	1+: $1.0017 10+: $0.8864 100+: $0.7004 500+: $0.5432 1000+: $0.4288
SUA70090E-E3-ND	SUA70090E-E3	Vishay Siliconix	View more Series: ThunderFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 42.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V Power Dissipation (Max): 35.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	897 Order	1+: $1.1718 10+: $1.0597 100+: $0.8518 500+: $0.6625 1000+: $0.5489
IRFI3205PBF-ND	IRFI3205PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	557 Order	--
SIHF12N60E-E3-N D	SIHF12N60E-E3	Vishay Siliconix	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Power Dissipation (Max): 33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	228 Order	--
SIHA20N50E-E3-N D	SIHA20N50E-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 184 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	56 Order	1+: $2.1357 10+: $1.9272 100+: $1.5486 500+: $1.2045 1000+: $0.998
IPAN60R650CEXKS A1-ND	IPAN60R650CEXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	953 Order	1+: $0.7749 10+: $0.6854 100+: $0.5419 500+: $0.4203 1000+: $0.3318
IPA80R1K4CEXKSA 2-ND	IPA80R1K4CEXKSA 2	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	918 Order	1+: $1.0647 10+: $0.9444 100+: $0.7462 500+: $0.5787 1000+: $0.4569
SIHF8N50D-E3-ND	SIHF8N50D-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V Power Dissipation (Max): 33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	998 Order	1+: $1.2096 10+: $1.0735 100+: $0.8485 500+: $0.658 1000+: $0.5195
IRFI4510GPBF-ND	IRFI4510GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2998pF @ 50V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	586 Order	1+: $1.4049 10+: $1.2682 100+: $1.0188 500+: $0.7924 1000+: $0.6566
SIHF7N60E-E3-ND	SIHF7N60E-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	205 Order	1+: $1.7388 10+: $1.57 100+: $1.2617 500+: $0.9813 1000+: $0.8131
IPA70R900P7SXKS A1-ND	IPA70R900P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 60A Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 400V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V Power Dissipation (Max): 20.5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	482 Order	1+: $0.6363 10+: $0.5626 100+: $0.4445 500+: $0.3447 1000+: $0.2721
IPA70R750P7SXKS A1-ND	IPA70R750P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70A Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V Power Dissipation (Max): 21.2W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	390 Order	1+: $0.6678 10+: $0.5928 100+: $0.4686 500+: $0.3634 1000+: $0.2869
IPA70R600P7SXKS A1-ND	IPA70R600P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V Power Dissipation (Max): 25W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	388 Order	1+: $0.7119 10+: $0.6325 100+: $0.4997 500+: $0.3875 1000+: $0.3059
IPAN70R900P7SXK SA1-ND	IPAN70R900P7SXK SA1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 60A Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V Power Dissipation (Max): 17.9W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	465 Order	1+: $0.7245 10+: $0.6325 100+: $0.4879 500+: $0.3614 1000+: $0.2891
IPAW60R600P7SXK SA1-ND	IPAW60R600P7SXK SA1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 80A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V Power Dissipation (Max): 21W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	259 Order	1+: $0.7245 10+: $0.6426 450+: $0.4458 900+: $0.3442 1350+: $0.311
IPA80R1K0CEXKSA 1-ND	IPA80R1K0CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V Power Dissipation (Max): 32W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPA80R310CEXKSA 1-ND	IPA80R310CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 100V Power Dissipation (Max): 35W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPA80R1K4CEXKSA 1-ND	IPA80R1K4CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPA80R460CEXKSA 1-ND	IPA80R460CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 680A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPA80R650CEXKSA 1-ND	IPA80R650CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 470A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 33W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IRFI4410ZGPBF-N D	IRFI4410ZGPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
IPAN70R750P7SXK SA1-ND	IPAN70R750P7SXK SA1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70A Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V Power Dissipation (Max): 20.8W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0.6678 10+: $0.5928 100+: $0.4686 500+: $0.3634 1000+: $0.2869
IPA60R600P7SXKS A1-ND	IPA60R600P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 80A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V Power Dissipation (Max): 21W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0.7245 10+: $0.6426 100+: $0.508 500+: $0.394 1000+: $0.311
IPAW60R600CEXKS A1-ND	IPAW60R600CEXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 444pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0.7749 10+: $0.6854 450+: $0.4755 900+: $0.3672 1350+: $0.3318
IPA70R360P7SXKS A1-ND	IPA70R360P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V Power Dissipation (Max): 26.4W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0.9072 10+: $0.8026 100+: $0.6342 500+: $0.4918 1000+: $0.3883
IPA60R360P7XKSA 1-ND	IPA60R360P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 140A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V Power Dissipation (Max): 22W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $1.1718 50+: $0.9475 100+: $0.8527 500+: $0.6632 1000+: $0.5495
IPA95R1K2P7XKSA 1-ND	IPA95R1K2P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 478pF @ 400V Power Dissipation (Max): 27W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	500 Order	1+: $1.2033 10+: $1.0679 100+: $0.844 500+: $0.6545 1000+: $0.5168

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