STF16N60M6 Allicdata Electronics
Allicdata Part #:

497-17547-ND

Manufacturer Part#:

STF16N60M6

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: N-CHANNEL 600V M6 POWER MOSFET
More Detail: Through Hole TO-220-2 Full Pack
DataSheet: STF16N60M6 datasheetSTF16N60M6 Datasheet/PDF
Quantity: 975
1 +: $ 1.69470
50 +: $ 1.36748
100 +: $ 1.23077
500 +: $ 0.95725
1000 +: $ 0.79314
Stock 975Can Ship Immediately
$ 1.86
Specifications
Series: UltraFASTmesh™
Packaging: Tube 
Part Status: Active
Mounting Type: Through Hole
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Description

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The STF16N60M6 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in a variety of applications. This device is generally used as a switch or an amplifier in circuits, and is often used in low-power applications such as power supplies, converters, and amplifiers. The STF16N60M6 is a single N-channel MOSFET.

The STF16N60M6 is part of the STMicroelectronics ST MOSFET family. It is composed of a silicon P-channel enhancement MOSFET that features an extended drain source breakdown voltage range. This device also has a maximum on-state resistance of 0.070 ohms, with a maximum drain source voltage rating of 600 volts. The STF16N60M6 has a maximum drain current of 16 amps and a maximum gate to source voltage of +/- 20 volts. The STF16N60M6 also has a lead-free Pb-free RoHS compliant package.

The STF16N60M6 has a wide range of applications. It can be used in computer power supplies, audio power amplifiers and high voltage switching. It can also be used in feedback control circuits and high speed switching circuits, where it is used to switch on and off the current flow between two points. The STF16N60M6 is also a suitable choice for motor drive applications, since it can be used as an inverter or modulator for speed control.

The STF16N60M6 has several features that make it an excellent choice for applications requiring superior performance and reliability. Its low on-state resistance and high-voltage rating allow it to handle heavy loads efficiently and accurately. The device also features a fast switching time and low gate charge, which improve performance and reduce power consumption. Additionally, the STF16N60M6 is designed to suppress electrical noise, allowing it to operate in environments with high electromagnetic interference.

The working principle of the STF16N60M6 is based on the depletion and enhancement modes of the MOSFET device. When the gate of the transistor is at 0 volts, the transistor is in its off-state or depletion mode, wherein the current does not flow. When a positive voltage is applied to the gate, the device is switched on and the current flows. This is known as the enhancement mode and is the most commonly used feature of the device.

The STF16N60M6 is an excellent MOSFET that can be used in a variety of applications requiring efficient and reliable performance. Its wide range of features and excellent on-state characteristics make it an excellent choice for many applications. Its versatile design makes it an ideal choice for switching, controlling, and regulating current flows in various electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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