IRFIZ44NPBF Allicdata Electronics
Allicdata Part #:

IRFIZ44NPBF-ND

Manufacturer Part#:

IRFIZ44NPBF

Price: $ 1.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 31A TO220FP
More Detail: N-Channel 55V 31A (Tc) 45W (Tc) Through Hole TO-22...
DataSheet: IRFIZ44NPBF datasheetIRFIZ44NPBF Datasheet/PDF
Quantity: 2998
1 +: $ 1.31000
10 +: $ 1.27070
100 +: $ 1.24450
1000 +: $ 1.21830
10000 +: $ 1.17900
Stock 2998Can Ship Immediately
$ 1.31
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 24 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFZ44NPBF transistors are high-power, high-speed transistors feature low drain-to-source on-resistance and maximum ratings of 44V and 55A. They are utilized in many different types of applications where high current, high speed, and low on-resistance are desirable. IRFZ44NPBF transistors are commonly used in motor control, DC-DC converters, power amplifiers, and high-speed DC switching applications.

In addition to their wide range of application fields, IRFZ44NPBF transistors are also designed with an impressive range of technical specifications and features that make them ideal for specific use cases. They have a maximum drain-source voltage of 55V, a maximum gate-source voltage of ±30V, a maximum drain current of 55A, a maximum total gate charge of 65nC (maximum gate-source voltage of 10V), and an on-resistance rated at 1mΩ. They also have an operating temperature range of -55°C to +175°C, making them suitable for use in both extremely cold and hot environments. Additionally, they are capable of handling peak pulsed drain currents up to 169A.

The working principle of IRFZ44NPBF transistors is based on the process of electron transfer and is similar to the operation of insulated gate field effect transistors (IGFETs). A P-type substrate, in which the electrons are created and stored, is used. Then an N-type source and drain are implanted in this substrate and a gate is positioned between them. The gate is used to control the flow of electrons between the source and drain and the amount of current that flows in this region.

When the gate voltage is low, the channel between the source and drain is minimal, restricting the current flow across it. On the other hand, when the gate voltage increases, the channel gets wider and more current can flow through it. In this way, IRFZ44NPBF transistors can be used to control the current flow in a circuit by controlling the gate voltage.

Aside from this, IRFZ44NPBF transistors also come with several protection features. They are able to tolerate over-voltage, reverse-voltage, and transient voltage situations. Additionally, they are protected from thermal over-stress by having a thermal shutdown protection feature. This feature limits the current flow through the transistor when it reaches a certain temperature, thus protecting it from getting damaged.

IRFZ44NPBF transistors are a versatile type of high-power, high-speed transistors which are well-suited for many different applications. They are available in surface mount and through-hole packages and can be used in motor control, power amplifiers, and high-speed switching applications. Thanks to their impressive specifications and protection features, these transistors are suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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