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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FDV302P-NB8V001 CT-ND	FDV302P-NB8V001	ON Semiconductor	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Vgs (Max): -8V Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
SI4778DY-T1-E3T R-ND	SI4778DY-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
FDMC8588TR-ND	FDMC8588	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16.5A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1228pF @ 13V Power Dissipation (Max): 2.4W (Ta), 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	1000 Order	--
296-24255-2-ND	CSD16411Q3	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 12.5V Power Dissipation (Max): 2.7W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	--
296-30314-2-ND	CSD16342Q5A	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V Power Dissipation (Max): 3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	1000 Order	2500+: $0.3225 5000+: $0.3064
FDMC7582TR-ND	FDMC7582	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16.7A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 16.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 13V Power Dissipation (Max): 2.3W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	1000 Order	--
SI4116DY-T1-E3T R-ND	SI4116DY-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
MCP87030T-U/MFT R-ND	MCP87030T-U/MF	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 12.5V Power Dissipation (Max): 2.2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN Base Part Number: MCP87030	1000 Order	3300+: $0.4361
IRF6892STRPBF-N D	IRF6892STRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 28A (Ta), 125A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 2.1V @ 50A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 13V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S3C Package / Case: DirectFET Isometric S3C	1000 Order	--
SIE878DF-T1-GE3 TR-ND	SIE878DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $0.5037
IRF6714MTRPBF-N D	IRF6714MTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 29A (Ta), 166A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2.4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 13V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	1000 Order	--
SIE882DF-T1-GE3 -ND	SIE882DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 12.5V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $0.7922
IRF6898MTRPBF-N D	IRF6898MTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 35A (Ta), 213A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 2.1V @ 100A Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 13V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 78W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	1000 Order	--
SI4632DY-T1-E3T R-ND	SI4632DY-T1-E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.8411
SI4632DY-T1-GE3 -ND	SI4632DY-T1-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.8411
SISS28DN-T1-GE3 TR-ND	SISS28DN-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.52 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 10V Power Dissipation (Max): 57W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8S (3.3x3.3) Package / Case: PowerPAK 1212-8S	1000 Order	3000+: $0.2698
SIRC16DP-T1-GE3 TR-ND	SIRC16DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.96 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 10V Power Dissipation (Max): 54.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
FDMC2D8N025SOST R-ND	FDMC2D8N025S	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 4615pF @ 13V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	1000 Order	3000+: $0.4191
SIRA22DP-T1-RE3 TR-ND	SIRA22DP-T1-RE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.76 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 7570pF @ 10V Power Dissipation (Max): 83.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.4341
DMP213DUFA-7B-N D	DMP213DUFA-7B	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 145mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): -8V Input Capacitance (Ciss) (Max) @ Vds: 27.2pF @ 10V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0806-3 Package / Case: 3-XFDFN	1000 Order	10000+: $0.0444
NVJS4405NT1G-ND	NVJS4405NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power Dissipation (Max): 630mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	3000+: $0.0685
DMG302PU-13DITR -ND	DMG302PU-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 27.2pF @ 10V Power Dissipation (Max): 320mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	10000+: $0.0832
DMG301NU-7-ND	DMG301NU-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power Dissipation (Max): 320mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
DMP2039UFDE-7DI TR-ND	DMP2039UFDE-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48.7nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
IRFHS8242TRPBF- ND	IRFHS8242TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 9.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	1000 Order	--
SIS626DN-T1-GE3 -ND	SIS626DN-T1-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
296-25646-2-ND	CSD16340Q3	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 21A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V Power Dissipation (Max): 3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	101069 Order	--
1727-5292-2-ND	PSMN0R9-25YLC,1 15	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.99 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 12V Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.3912
1727-4277-2-ND	PSMN1R2-25YL,11 5	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6380pF @ 12V Power Dissipation (Max): 121W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	1000 Order	1500+: $0.4871
296-25645-2-ND	CSD16325Q5C	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 12.5V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
NTD14N03RT4GOST R-ND	NTD14N03RT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
IPSH5N03LAG-ND	IPSH5N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 35A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
IPSH6N03LAG-ND	IPSH6N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
IPU04N03LA-ND	IPU04N03LA	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 80A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IPU04N03LAG-ND	IPU04N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 80A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IPU05N03LA-ND	IPU05N03LA	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IPU05N03LAG-ND	IPU05N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IPU10N03LA-ND	IPU10N03LA	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IPU10N03LAG-ND	IPU10N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IPUH6N03LAG-ND	IPUH6N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--

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