SIE882DF-T1-GE3

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	10-PolarPAK® (L)
Supplier Device Package:	10-PolarPAK® (L)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.2W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6400pF @ 12.5V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	145nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SIE882DF-T1-GE3 is a surface-mounted N-channel enhancement-mode Field-Effect Transistor (FET). This FET has a standard gate-source voltage range of -20V to +20V, and a low on-state resistance of 0.007 Ohms. This device is characterized for operating in a wide temperature range from -55°C to +150°C. It has a maximum drain-source breakdown voltage of 60V and a maximum drain current of 15A. These ratings make this device suitable for a wide variety of applications, from industrial, automotive, and consumer applications to high frequency and power amplification.The SIE882DF-T1-GE3 is an enhancement-mode FET, meaning that it is naturally off and must be applied a gate-source voltage to turn it on. It works by using the principle of majority carriers. When the gate-source voltage is applied, electrons are attracted to the gate and form a conductive channel between the source and drain. This allows current to flow from the source to the drain. The higher the gate-source voltage, the more current that is allowed to flow through the conductive channel, and thus the device is controlled by the gate-source voltage.The advantages of this device are its low on-state resistance, high drain-source breakdown voltage and wide temperature range. The low on-state resistance means the device has a low power dissipation, while the high drain-source breakdown voltage means the device can withstand higher voltage levels. The wide temperature range makes it suitable for a wide variety of applications.The SIE882DF-T1-GE3 is a popular device for power amplifier applications. Because of its low on-state resistance, it acts as an ideal switch to deliver current quickly with low resistance. It is also used in frequency multipliers, RF power amplifiers, and other high-frequency applications.This device is also commonly used for consumer, automotive and industrial applications due to its wide temperature range. It is suitable for a wide range of current levels and can be used in the most extreme environmental conditions.The SIE882DF-T1-GE3 is a versatile and reliable FET that can be used in a variety of applications. It is recommended for high-frequency and power amplification applications, consumer, automotive, and industrial applications. The device is characterized for operating in a wide temperature range and is capable of withstanding high voltage levels.

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